Beam injection studies of dislocations and oxygen precipitates in semiconductor silicon

被引：0

作者：

Pizzini, S

Binetti, S

Le Donne, A

Leoni, E

Acciarri, M

Salviati, G

Lazzarini, L

机构：

[1] Univ Milan, INFM, IT-20125 Milan, Italy

[2] Univ Milan, Dept Mat Sci, IT-20125 Milan, Italy

[3] CNR, MASPEC, IT-43100 Parma, Italy

来源：

BEAM INJECTION ASSESSMENT OF MICROSTRUCTURES IN SEMICONDUCTORS, 2000 | 2000年 / 78-79卷

关键词：

cathodo-luminescence; dislocations; oxygen precipitates; photoluminescence; silicon;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The results of a systematic photo and cathodo-luminescence analysis of a large matrix of CZ silicon samples on which different nucleation and oxide precipitation anneals have been carried out, are reported and correlated with the results of infrared and TEM analysis on the same sets of samples. The results obtained show that the precipitates are correlated with centres, which are responsible of light emission at 0.8 eV and 0.87 eV. Analysis on intentionally dislocated CZ and FZ samples supported these results and confirm that D3 and D4 bands are intrinsic to dislocations.

引用

页码：57 / 64

页数：8

共 16 条

[1] INTERLABORATORY DETERMINATION OF THE CALIBRATION FACTOR FOR THE MEASUREMENT OF THE INTERSTITIAL OXYGEN-CONTENT OF SILICON BY INFRARED-ABSORPTION [J].

BAGHDADI, A ;

BULLIS, WM ;

CROARKIN, MC ;

LI, YZ ;

SCACE, RI ;

SERIES, RW ;

STALLHOFER, P ;

WATANABE, M .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1989, 136 (07) :2015-2024

[2] Influence of different growth and nucleation times on optical spectra of precipitated oxygen in silicon [J].

Borghesi, A ;

Sassella, A ;

Porrini, M ;

Gambaro, D ;

Olmo, M .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2000, 73 (1-3) :149-153

[3] Defect states in plastically deformed n-type silicon [J].

Cavalcoli, D ;

Cavallini, A ;

Gombia, E .

PHYSICAL REVIEW B, 1997, 56 (16) :10208-10214

[4]

CAVALLINI A, 1993, INST PHYS CONF SER, P115

[5]

CLAEYS C, 1997, J PHYS III, V7, P869

[6] THE OPTICAL-PROPERTIES OF LUMINESCENCE-CENTERS IN SILICON [J].

DAVIES, G .

PHYSICS REPORTS-REVIEW SECTION OF PHYSICS LETTERS, 1989, 176 (3-4) :83-188

[7]

JONES RL, COMMUNICATION

[8]

KIMERLING LC, 1986, MATER RES SOC S P, V59, P83

[9] ON THE ENERGY-SPECTRUM OF DISLOCATIONS IN SILICON [J].

KVEDER, VV ;

OSIPYAN, YA ;

SCHROTER, W ;

ZOTH, G .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 72 (02) :701-713

[10] ELECTRICAL-PROPERTIES OF DISLOCATIONS AND POINT-DEFECTS IN PLASTICALLY DEFORMED SILICON [J].

OMLING, P ;

WEBER, ER ;

MONTELIUS, L ;

ALEXANDER, H ;

MICHEL, J .

PHYSICAL REVIEW B, 1985, 32 (10) :6571-6581

← 1 2 →