Electrical switching in Fe/Cr/MgO/Fe magnetic tunnel junctions

被引：34

作者：

Halley, D. ^{[1
]}

Majjad, H. ^{[1
]}

Bowen, M. ^{[1
]}

Najjari, N. ^{[1
]}

Henry, Y. ^{[1
]}

Ulhaq-Bouillet, C. ^{[1
]}

Weber, W. ^{[1
]}

Bertoni, G. ^{[2
,3
]}

Verbeeck, J. ^{[3
]}

Van Tendeloo, G. ^{[3
]}

机构：

[1] CNRS, ULP, UMR 7504, IPCMS, F-67034 Strasbourg 2, France

[2] Fdn Ist Italiano Tecnol IIT, IT-16163 Genoa, Italy

[3] Univ Antwerp, EMAT, B-2020 Antwerp, Belgium

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 21期

关键词：

D O I：

10.1063/1.2938696

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Hysteretic resistance switching is observed in epitaxial Fe/Cr/MgO/Fe magnetic tunnel junctions under bias voltage cycling between negative and positive values of about 1 V. The junctions switch back and forth between high- and low-resistance states, both of which depend on the device bias history. A linear dependence is found between the magnitude of the tunnel magnetoresistance and the crafted resistance of the junctions. To explain these results, a model is proposed that considers electron transport both by elastic tunneling and by defect-assisted transmission. (c) 2008 American Institute of Physics.

引用

页数：3

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