Evolution of the 7/2 Fractional Quantum Hall State in Two-Subband Systems

被引：20

作者：

Liu, Yang ^{[1
]}

Shabani, J. ^{[1
]}

Kamburov, D. ^{[1
]}

Shayegan, M. ^{[1
]}

Pfeiffer, L. N. ^{[1
]}

West, K. W. ^{[1
]}

Baldwin, K. W. ^{[1
]}

机构：

[1] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA

来源：

PHYSICAL REVIEW LETTERS | 2011年 / 107卷 / 26期

关键词：

D O I：

10.1103/PhysRevLett.107.266802

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report the evolution of the fractional quantum Hall state (FQHS) at a total Landau level (LL) filling factor of v = 7/2 in wide GaAs quantum wells in which electrons occupy two electric subbands. The data reveal subtle and distinct evolutions as a function of density, magnetic field tilt angle, or symmetry of the charge distribution. At intermediate tilt angles, for example, we observe a strengthening of the v = 7/2 FQHS. Moreover, in a well with asymmetric change distribution, there is a developing FQHS when the LL filling factor of the symmetric subband v(S) equals 5/2 while the antisymmetric subband has a filling factor of 1 < v(A) < 2.

引用

页数：5

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