Role of pO2 and film microstructure on the memristive properties of La2NiO4+δ/LaNiO3-δ bilayers

被引：6

作者：

Maas, Klaasjan ^{[1
]}

Wulles, Chloe ^{[1
,2
,3
]}

Caicedo Roque, Jose Manuel ^{[2
,3
]}

Ballesteros, Belen ^{[2
,3
]}

Lafarge, Valentin ^{[1
,2
,3
]}

Santiso, Jose ^{[2
,3
]}

Burriel, Monica ^{[1
]}

机构：

[1] Univ Grenoble Alpes, LMGP, Grenoble INP, CNRS, F-38000 Grenoble, France

[2] CSIC, Catalan Inst Nanosci & Nanotechnol ICN2, Campus UAB, Barcelona 08193, Spain

[3] Barcelona Inst Sci & Technol BIST, Campus UAB, Barcelona 08193, Spain

来源：

JOURNAL OF MATERIALS CHEMISTRY A | 2022年 / 10卷 / 12期

基金：

欧盟地平线“2020”;

关键词：

TRANSPORT-PROPERTIES; OXYGEN DIFFUSION; THIN-FILMS;

D O I：

10.1039/d1ta10296f

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

LaNiO3/La2NiO4 bilayers deposited at varying pO(2) conditions resulted in remarkable differences in film microstructure and cell parameters, directly affecting the electrical behaviour of Pt/LaNiO3/La2NiO4/Pt devices. The devices deposited at low pO(2) showed the largest memristance. We propose this is due to the formation of a p-type Schottky contact between LaNiO3 and La2NiO4, where the extent of its carrier depletion width can be modulated by the electric-field induced drift of interstitial oxygen ions acting as mobile acceptor dopants in La2NiO4.

引用

收藏

页码：6523 / 6530

页数：9

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