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- [42] Mesoscopic Metal-Insulator Transition at Ferroelastic Domain Walls in VO2ACS NANO, 2010, 4 (08) : 4412 - 4419Tselev, Alexander论文数: 0 引用数: 0 h-index: 0机构: Oak Ridge Natl Lab, Oak Ridge, TN 37831 USA Oak Ridge Natl Lab, Oak Ridge, TN 37831 USAMeunier, Vincent论文数: 0 引用数: 0 h-index: 0机构: Oak Ridge Natl Lab, Oak Ridge, TN 37831 USA Oak Ridge Natl Lab, Oak Ridge, TN 37831 USAStrelcov, Evgheni论文数: 0 引用数: 0 h-index: 0机构: So Illinois Univ, Dept Phys, Carbondale, IL 62901 USA Oak Ridge Natl Lab, Oak Ridge, TN 37831 USAShelton, William A., Jr.论文数: 0 引用数: 0 h-index: 0机构: Oak Ridge Natl Lab, Oak Ridge, TN 37831 USA Oak Ridge Natl Lab, Oak Ridge, TN 37831 USALuk'yanchuk, Igor A.论文数: 0 引用数: 0 h-index: 0机构: Univ Picardie Jules Verne, F-80039 Amiens, France LD Landau Theoret Phys Inst, Moscow, Russia Oak Ridge Natl Lab, Oak Ridge, TN 37831 USAJones, Keith论文数: 0 引用数: 0 h-index: 0机构: Asylum Res, Santa Barbara, CA 93117 USA Oak Ridge Natl Lab, Oak Ridge, TN 37831 USAProksch, Roger论文数: 0 引用数: 0 h-index: 0机构: Asylum Res, Santa Barbara, CA 93117 USA Oak Ridge Natl Lab, Oak Ridge, TN 37831 USAKolmakov, Andrei论文数: 0 引用数: 0 h-index: 0机构: So Illinois Univ, Dept Phys, Carbondale, IL 62901 USA Oak Ridge Natl Lab, Oak Ridge, TN 37831 USAKalinin, Sergei V.论文数: 0 引用数: 0 h-index: 0机构: Oak Ridge Natl Lab, Oak Ridge, TN 37831 USA Oak Ridge Natl Lab, Oak Ridge, TN 37831 USA
- [43] Fracture toughness of VO2 microcrystals across metal-insulator transitionMATERIALS LETTERS, 2022, 315Verma, Divya论文数: 0 引用数: 0 h-index: 0机构: Indian Inst Technol Mandi, Sch Engn, Mandi 175075, Himachal Prades, India Indian Inst Technol Mandi, Sch Engn, Mandi 175075, Himachal Prades, IndiaSingh, Davinder论文数: 0 引用数: 0 h-index: 0机构: Indian Inst Technol Mandi, Sch Engn, Mandi 175075, Himachal Prades, India Univ Coll Cork, Tyndall Natl Inst, Cork, Ireland Indian Inst Technol Mandi, Sch Engn, Mandi 175075, Himachal Prades, IndiaBalakrishnan, Viswanath论文数: 0 引用数: 0 h-index: 0机构: Indian Inst Technol Mandi, Sch Engn, Mandi 175075, Himachal Prades, India Indian Inst Technol Mandi, Sch Engn, Mandi 175075, Himachal Prades, India
- [44] Thermal Conductivity of VO2 Nanowires at Metal-Insulator Transition TemperatureNANOMATERIALS, 2021, 11 (09)Li, Da论文数: 0 引用数: 0 h-index: 0机构: Tongji Univ, Sch Phys Sci & Engn, China EU Joint Ctr Nanophonon, Ctr Phonon & Thermal Energy Sci, Shanghai 200092, Peoples R China Tongji Univ, Sch Phys Sci & Engn, China EU Joint Ctr Nanophonon, Ctr Phonon & Thermal Energy Sci, Shanghai 200092, Peoples R ChinaWang, Qilang论文数: 0 引用数: 0 h-index: 0机构: Tongji Univ, Sch Phys Sci & Engn, China EU Joint Ctr Nanophonon, Ctr Phonon & Thermal Energy Sci, Shanghai 200092, Peoples R China Tongji Univ, Sch Phys Sci & Engn, China EU Joint Ctr Nanophonon, Ctr Phonon & Thermal Energy Sci, Shanghai 200092, Peoples R ChinaXu, Xiangfan论文数: 0 引用数: 0 h-index: 0机构: Tongji Univ, Sch Phys Sci & Engn, China EU Joint Ctr Nanophonon, Ctr Phonon & Thermal Energy Sci, Shanghai 200092, Peoples R China Tongji Univ, Sch Phys Sci & Engn, China EU Joint Ctr Nanophonon, Ctr Phonon & Thermal Energy Sci, Shanghai 200092, Peoples R China
- [45] Artificial afferent neurons based on the metal-insulator transition of VO2SCIENCE CHINA-INFORMATION SCIENCES, 2024, 67 (11)Chen, Jiayao论文数: 0 引用数: 0 h-index: 0机构: Zhejiang Univ, State Key Lab Silicon & Adv Semicond Mat, Hangzhou 310027, Peoples R China Zhejiang Univ, Sch Mat Sci & Engn, Hangzhou 310027, Peoples R China Zhejiang Univ, State Key Lab Silicon & Adv Semicond Mat, Hangzhou 310027, Peoples R ChinaYin, Lei论文数: 0 引用数: 0 h-index: 0机构: Zhejiang Univ, State Key Lab Silicon & Adv Semicond Mat, Hangzhou 310027, Peoples R China Zhejiang Univ, Sch Mat Sci & Engn, Hangzhou 310027, Peoples R China Zhejiang Univ, State Key Lab Silicon & Adv Semicond Mat, Hangzhou 310027, Peoples R ChinaWang, Yue论文数: 0 引用数: 0 h-index: 0机构: Zhejiang Univ, State Key Lab Silicon & Adv Semicond Mat, Hangzhou 310027, Peoples R China Zhejiang Univ, Sch Mat Sci & Engn, Hangzhou 310027, Peoples R China Zhejiang Univ, Inst Adv Semicond, ZJU Hangzhou Global Sci & Technol Innovat Ctr, Hangzhou 311215, Peoples R China Zhejiang Univ, ZJU Hangzhou Global Sci & Technol Innovat Ctr, Zhejiang Prov Key Lab Power Semicond Mat & Devices, Hangzhou 311215, Peoples R China Zhejiang Univ, State Key Lab Silicon & Adv Semicond Mat, Hangzhou 310027, Peoples R ChinaWang, Haolin论文数: 0 引用数: 0 h-index: 0机构: Zhejiang Univ, State Key Lab Silicon & Adv Semicond Mat, Hangzhou 310027, Peoples R China Zhejiang Univ, Sch Mat Sci & Engn, Hangzhou 310027, Peoples R China Zhejiang Univ, State Key Lab Silicon & Adv Semicond Mat, Hangzhou 310027, Peoples R ChinaLi, Dongke论文数: 0 引用数: 0 h-index: 0机构: Zhejiang Univ, State Key Lab Silicon & Adv Semicond Mat, Hangzhou 310027, Peoples R China Zhejiang Univ, Sch Mat Sci & Engn, Hangzhou 310027, Peoples R China Zhejiang Univ, Inst Adv Semicond, ZJU Hangzhou Global Sci & Technol Innovat Ctr, Hangzhou 311215, Peoples R China Zhejiang Univ, ZJU Hangzhou Global Sci & Technol Innovat Ctr, Zhejiang Prov Key Lab Power Semicond Mat & Devices, Hangzhou 311215, Peoples R China Zhejiang Univ, State Key Lab Silicon & Adv Semicond Mat, Hangzhou 310027, Peoples R ChinaYang, Deren论文数: 0 引用数: 0 h-index: 0机构: Zhejiang Univ, State Key Lab Silicon & Adv Semicond Mat, Hangzhou 310027, Peoples R China Zhejiang Univ, Sch Mat Sci & Engn, Hangzhou 310027, Peoples R China Zhejiang Univ, Inst Adv Semicond, ZJU Hangzhou Global Sci & Technol Innovat Ctr, Hangzhou 311215, Peoples R China Zhejiang Univ, ZJU Hangzhou Global Sci & Technol Innovat Ctr, Zhejiang Prov Key Lab Power Semicond Mat & Devices, Hangzhou 311215, Peoples R China Zhejiang Univ, State Key Lab Silicon & Adv Semicond Mat, Hangzhou 310027, Peoples R ChinaPi, Xiaodong论文数: 0 引用数: 0 h-index: 0机构: Zhejiang Univ, State Key Lab Silicon & Adv Semicond Mat, Hangzhou 310027, Peoples R China Zhejiang Univ, Sch Mat Sci & Engn, Hangzhou 310027, Peoples R China Zhejiang Univ, Inst Adv Semicond, ZJU Hangzhou Global Sci & Technol Innovat Ctr, Hangzhou 311215, Peoples R China Zhejiang Univ, ZJU Hangzhou Global Sci & Technol Innovat Ctr, Zhejiang Prov Key Lab Power Semicond Mat & Devices, Hangzhou 311215, Peoples R China Zhejiang Univ, State Key Lab Silicon & Adv Semicond Mat, Hangzhou 310027, Peoples R China
- [46] Suppression of Structural Phase Transition in VO2 by Epitaxial Strain in Vicinity of Metal-insulator TransitionSCIENTIFIC REPORTS, 2016, 6Yang, Mengmeng论文数: 0 引用数: 0 h-index: 0机构: Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230026, Anhui, Peoples R China Univ Sci & Technol China, Collaborat Innovat Ctr Chem Energy Mat, Hefei 230026, Anhui, Peoples R China Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230026, Anhui, Peoples R ChinaYang, Yuanjun论文数: 0 引用数: 0 h-index: 0机构: Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230026, Anhui, Peoples R China Univ Sci & Technol China, Collaborat Innovat Ctr Chem Energy Mat, Hefei 230026, Anhui, Peoples R China Univ Sci & Technol China, Dept Mat Sci & Engn, CAS Key Lab Mat Energy Convers, Hefei 230026, Anhui, Peoples R China Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230026, Anhui, Peoples R ChinaHong, Bin论文数: 0 引用数: 0 h-index: 0机构: Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230026, Anhui, Peoples R China Univ Sci & Technol China, Collaborat Innovat Ctr Chem Energy Mat, Hefei 230026, Anhui, Peoples R China Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230026, Anhui, Peoples R ChinaWang, Liangxin论文数: 0 引用数: 0 h-index: 0机构: Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230026, Anhui, Peoples R China Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230026, Anhui, Peoples R ChinaHu, Kai论文数: 0 引用数: 0 h-index: 0机构: Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230026, Anhui, Peoples R China Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230026, Anhui, Peoples R ChinaDong, Yongqi论文数: 0 引用数: 0 h-index: 0机构: Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230026, Anhui, Peoples R China Univ Sci & Technol China, Collaborat Innovat Ctr Chem Energy Mat, Hefei 230026, Anhui, Peoples R China Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230026, Anhui, Peoples R ChinaXu, Han论文数: 0 引用数: 0 h-index: 0机构: Univ Sci & Technol China, Dept Phys, Hefei 230026, Anhui, Peoples R China Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230026, Anhui, Peoples R ChinaHuang, Haoliang论文数: 0 引用数: 0 h-index: 0机构: Univ Sci & Technol China, Dept Mat Sci & Engn, CAS Key Lab Mat Energy Convers, Hefei 230026, Anhui, Peoples R China Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230026, Anhui, Peoples R ChinaZhao, Jiangtao论文数: 0 引用数: 0 h-index: 0机构: Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230026, Anhui, Peoples R China Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230026, Anhui, Peoples R ChinaChen, Haiping论文数: 0 引用数: 0 h-index: 0机构: Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230026, Anhui, Peoples R China Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230026, Anhui, Peoples R ChinaSong, Li论文数: 0 引用数: 0 h-index: 0机构: Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230026, Anhui, Peoples R China Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230026, Anhui, Peoples R ChinaJu, Huanxin论文数: 0 引用数: 0 h-index: 0机构: Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230026, Anhui, Peoples R China Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230026, Anhui, Peoples R ChinaZhu, Junfa论文数: 0 引用数: 0 h-index: 0机构: Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230026, Anhui, Peoples R China Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230026, Anhui, Peoples R ChinaBao, Jun论文数: 0 引用数: 0 h-index: 0机构: Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230026, Anhui, Peoples R China Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230026, Anhui, Peoples R ChinaLi, Xiaoguang论文数: 0 引用数: 0 h-index: 0机构: Univ Sci & Technol China, Dept Phys, Hefei 230026, Anhui, Peoples R China Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230026, Anhui, Peoples R ChinaGu, Yueliang论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai Synchrotron Radiat Facil, Shanghai 201204, Peoples R China Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230026, Anhui, Peoples R ChinaYang, Tieying论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai Synchrotron Radiat Facil, Shanghai 201204, Peoples R China Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230026, Anhui, Peoples R ChinaGao, Xingyu论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai Synchrotron Radiat Facil, Shanghai 201204, Peoples R China Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230026, Anhui, Peoples R ChinaLuo, Zhenlin论文数: 0 引用数: 0 h-index: 0机构: Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230026, Anhui, Peoples R China Univ Sci & Technol China, Collaborat Innovat Ctr Chem Energy Mat, Hefei 230026, Anhui, Peoples R China Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230026, Anhui, Peoples R ChinaGao, Chen论文数: 0 引用数: 0 h-index: 0机构: Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230026, Anhui, Peoples R China Univ Sci & Technol China, Collaborat Innovat Ctr Chem Energy Mat, Hefei 230026, Anhui, Peoples R China Univ Sci & Technol China, Dept Mat Sci & Engn, CAS Key Lab Mat Energy Convers, Hefei 230026, Anhui, Peoples R China Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230026, Anhui, Peoples R China
- [47] Proton doping-induced chromism in VO2 beyond the conventional metal-insulator transition approachJOURNAL OF SOLID STATE ELECTROCHEMISTRY, 2024, 28 (12) : 4511 - 4517Kanki, Teruo论文数: 0 引用数: 0 h-index: 0机构: Osaka Univ, Inst Sci & Ind Res, 8-1 Mihogaoka, Osaka, Ibaraki 5670047, Japan Osaka Univ, Inst Sci & Ind Res, 8-1 Mihogaoka, Osaka, Ibaraki 5670047, JapanMajima, Takuya论文数: 0 引用数: 0 h-index: 0机构: Kyoto Univ, Dept Nucl Engn, Nishikyo Ku, Kyoto 6158540, Japan Osaka Univ, Inst Sci & Ind Res, 8-1 Mihogaoka, Osaka, Ibaraki 5670047, Japan
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