New capabilities of OBIRCH method for fault localization and defect detection

被引:45
作者
Nikawa, K
Inoue, S
机构
来源
SIXTH ASIAN TEST SYMPOSIUM (ATS'97), PROCEEDINGS | 1997年
关键词
D O I
10.1109/ATS.1997.643961
中图分类号
TP39 [计算机的应用];
学科分类号
081203 ; 0835 ;
摘要
We have improved the optical beam induced resistance change (OBIRCH) method so as to detect (1) a current path as small as 10-50 mu A from the rear side of a chip, (2) current paths in silicide lines as narrow as 0.2 mu m, (3) high-resistivity Ti-depleted polysilicon regions in 0.2 mu m wide silicide lines, and (4) high-resistivity amorphous thin layers as thin as a few nanometers at the bottoms of vias. Ail detections were possible even in observation areas as wide as 5 mm x 5 mm. The physical causes of these detections were characterized by focused ion beam and transmission electron microscopy.
引用
收藏
页码:214 / 219
页数:6
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