Langasite Bonding via High Temperature for Fabricating Sealed Microcavity of Pressure Sensors

被引:2
|
作者
Zhang, Juan [1 ,2 ]
Tan, Qiulin [1 ]
Zhang, Lei [1 ]
Zhao, Nan [1 ]
Liang, Xiaorui [1 ]
机构
[1] North Univ China, State Key Lab Dynam Measurement Technol, Taiyuan 030051, Peoples R China
[2] Taiyuan Inst Technol, Dept Mech Engn, Taiyuan 030008, Peoples R China
基金
国家重点研发计划; 中国国家自然科学基金;
关键词
langasite; direct bonding; high temperature; sealed microcavity; bonding mechanism; SINGLE-CRYSTAL LA3GA5SIO14; EFFECTIVE IONIC-RADII; CZOCHRALSKI GROWTH; ROOM-TEMPERATURE; DAMAGE LAYER; PIEZOELECTRICITY; MECHANISM; REMOVAL; SILICON; MODEL;
D O I
10.3390/mi13030479
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
We proposed a novel Langasite (LGS) bonding method only using high temperature to solve the manufacturing difficulty of the sealed microcavity of pressure sensors. The optimal bonding parameters by comparative experiments were defined as 1350 degrees C for 3 h. Due to simple experimental conditions, low experimental cost, and be suitable for bonding wafers with various sizes, the method is convenient for popularization and mass-production, thus promoting the development of surface acoustic wave (SAW) devices at high temperatures. Simultaneously, an intact microcavity was observed by scanning electron microscopy, and a tight and void-free bonding interface with a transition layer thickness of 2.2 nm was confirmed via transmission electron microscopy. The results of tensile and leakage experiments indicated that the bonded wafer with the sealed microcavity exhibited a high bonding strength of 4.02 MPa and excellent seal performance. Compared to the original wafer, the piezoelectric constant of the LGS bonded wafer had a reduction of only 4.43%. The above characteristics show that the sealed microcavity prepared by this method satisfies the conditions for fabricating the LGS SAW pressure sensors. Additionally, based on the bonding interface characterizations, the mechanism of LGS bonding has been investigated for the first time.
引用
收藏
页数:12
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