Hysteretic inverter-on-a-body-tied-wire based on less-than-10mV/decade abrupt punch-through impact ionization MOS (PIMOS) switch

被引：0

作者：

Moselund, K. E. ^{[1
]}

Port, V. ^{[1
]}

Bouvet, D. ^{[1
]}

Lonescu, A. M. ^{[1
]}

机构：

[1] Ecole Polytech Fed Lausanne, CH-1015 Lausanne, Switzerland

来源：

2008 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATIONS (VLSI-TSA), PROCEEDINGS OF TECHNICAL PROGRAM | 2008年

关键词：

D O I：

10.1109/VTSA.2008.4530780

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work reports for the first time on a cascadable NMOS inverter based on punch-through impact ionization MOSFET (PIMOS) integrated on a single body-tied silicon wire. The PIMOS device acts as a single-transistor-latch and shows abrupt current switching (3-10mV/dec.) as well as hysteresis in both I-D(V-DS) and I-D(V-GS). An inverter gain as high as -80 and a 300mV hysteresis width in the transfer characteristics are reported at room temperature. Temperature stability of the devices up to 125 degrees C and operation for more than 10(4) cycles without significant degradation are demonstrated, much beyond the performances of previously reported I-MOS device.

引用

页码：22 / +

页数：2

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