Electrical resistivity of acceptor carbon in GaAs

被引：8
作者：
da Silva, AF
Pepe, I
Sernelius, BE
Persson, C
Ahuja, R
de Souza, JP
Suzuki, Y
Yang, Y
机构：
[1] Univ Fed Bahia, Inst Fis, Lab Propriedades Oticas, BR-40210340 Salvador, BA, Brazil
[2] Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden
[3] Uppsala Univ, Dept Phys, Condensed Matter Theory Grp, SE-75121 Uppsala, Sweden
[4] Univ Fed Rio Grande Sul, Inst Fis, BR-91501970 Porto Alegre, RS, Brazil
[5] CUNY City Coll, Dept Phys, New York, NY 10031 USA
来源：
JOURNAL OF APPLIED PHYSICS | 2004年 / 95卷 / 05期
关键词：
D O I：
10.1063/1.1645971
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The electrical resistivity was investigated from room temperature down to 1.7 K for the shallow acceptor carbon in GaAs prepared by ion implantation with impurity concentrations between 10(17) and 10(19) cm(-3). Good agreement was obtained between the measured resistivities and resistivities calculated by a generalized Drude approach at similar temperatures and doping concentrations. The critical impurity concentration for the metal-nonmetal transition was found to be about 10(18) cm(-3). (C) 2004 American Institute of Physics.
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页码：2532 / 2535
页数：4
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