Physical properties of very thin SnS films deposited by thermal evaporation

被引:102
|
作者
Cheng, Shuying [1 ,2 ]
Conibeer, Gavin [3 ]
机构
[1] Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
[2] Fuzhou Univ, Inst Micronano Devices & Solar Cells, Fuzhou 350108, Peoples R China
[3] Univ New S Wales, ARC Photovolta Ctr Excellence, Sydney, NSW 2052, Australia
关键词
Very thin SnS films; Thermal evaporation; Physical properties; SOLAR-CELLS; CDTE;
D O I
10.1016/j.tsf.2011.01.355
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
SnS films with thicknesses of 20-65 nm have been deposited on glass substrates by thermal evaporation. The physical properties of the films were investigated using X-ray diffraction (XRD), scanning electron microscopy, X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, and ultraviolet-visible-near infrared spectroscopy at room temperature. The results from XRD, XPS and Raman spectroscopy analyses indicate that the deposited films mainly exhibit SnS phase, but they may contain a tiny amount of Sn2S3. The deposited SnS films are pinhole free, smooth and strongly adherent to the surfaces of the substrates. The color of the SnS films changes from pale yellow to brown with the increase of the film thickness from 20 nm to 65 nm. The very smooth surfaces of the thin films result in their high reflectance. The direct bandgap of the films is between 2.15 eV and 2.28 eV which is much larger than 1.3 eV of bulk SnS, this is deserving to be investigated further. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码:837 / 841
页数:5
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