Effect of rapid thermal annealing on a Ti/Au ohmic contact to n-ZnO

被引：4

作者：

Kim, J. H. ^{[1
]}

Moon, J. Y. ^{[1
]}

Lee, H. S. ^{[1
]}

Ahn, C. H. ^{[2
]}

Cho, H. K. ^{[2
]}

Lee, J. Y. ^{[3
]}

Kim, H. S. ^{[3
]}

机构：

[1] Kyungpook Natl Univ, Dept Mat Sci & Met Engn, Taegu 702701, South Korea

[2] Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 440746, South Korea

[3] Korea Maritime Univ, Major Semicond Phys, Pusan 606791, South Korea

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2008年 / 53卷 / 01期

关键词：

ohmic contact; n-ZnO; contact resistance; dc sputtering;

D O I：

10.3938/jkps.53.335

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We deposited Ti (20 nm)/Au (60 nm) layers on n-ZnO in order to produce low-resistivity ohmic contacts by using, a dc sputtering method. The samples were annealed at various temperatures for 1 min in an air ambient. The electrical and the structural properties of the Ti/Au contact to n-ZnO were investigated. The current-voltage measurement showed that the as-deposited and annealed samples exhibited an ohmic behavior. The specific contact resistance of the sample annealed at 300 degrees C was 5.6 x 10(-4) Omega.cm(2). Further increasing the temperature caused the ohmic behavior to be degraded. The X-ray diffraction (XRD) pattern was used to characterize the crystal quality of the Ti/Au contact layers. The XRD results showed that the crystallinity of the An layer was improved when it was annealed at 300 degrees C for 1 min. Further annealing caused the crystallinity to be degraded. We concluded that the improvement in the annealed Ti/Au contacts to n-ZnO might be due to an increased ohmic contact area caused by postgrowth thermal annealing.

引用

页码：335 / 338

页数：4

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