Mechanism of nitrogen removal from silicon nitride by nitric oxide

被引：12
作者：
Blain, MG [1 ]
机构：
[1] Sandia Natl Labs, Microelect Dev Lab, Albuquerque, NM 87185 USA
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1999年 / 17卷 / 02期
关键词：
CHEMICAL REACTIONS; ELECTRIC DISCHARGES; ETCHING; NITRIC OXIDE; PLASMA; SILICON NITRIDES; THIN FILMS;
D O I：
10.1116/1.582028
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
[No abstract available]
引用
收藏
页码：665 / 667
页数：3
相关论文
共 5 条
[1]  
BEULENS JJ, 1996, APPL PHYS LETT, V66, P2634
[2]   Chemical downstream etching of tungsten [J].
Blain, MG ;
Jarecki, RL ;
Simonson, RJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1998, 16 (04) :2115-2119
[3]   Role of nitrogen in the downstream etching of silicon nitride [J].
Blain, MG ;
Meisenheimer, TL ;
Stevens, JE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1996, 14 (04) :2151-2157
[4]   Remote plasma etching of silicon nitride and silicon dioxide using NF3/O2 gas mixtures [J].
Kastenmeier, BEE ;
Matsuo, PJ ;
Oehrlein, GS ;
Langan, JG .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1998, 16 (04) :2047-2056
[5]   Ultrahigh-selectivity silicon nitride etch process using an inductively coupled plasma source [J].
Wang, Y ;
Luo, L .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1998, 16 (03) :1582-1587
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