Mechanism of nitrogen removal from silicon nitride by nitric oxide

被引：12
作者：
Blain, MG [1 ]
机构：
[1] Sandia Natl Labs, Microelect Dev Lab, Albuquerque, NM 87185 USA
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1999年 / 17卷 / 02期
关键词：
CHEMICAL REACTIONS; ELECTRIC DISCHARGES; ETCHING; NITRIC OXIDE; PLASMA; SILICON NITRIDES; THIN FILMS;
D O I：
10.1116/1.582028
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
[No abstract available]
引用
收藏
页码：665 / 667
页数：3
相关论文
共 5 条
  • [1] BEULENS JJ, 1996, APPL PHYS LETT, V66, P2634
  • [2] Chemical downstream etching of tungsten
    Blain, MG
    Jarecki, RL
    Simonson, RJ
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1998, 16 (04): : 2115 - 2119
  • [3] Role of nitrogen in the downstream etching of silicon nitride
    Blain, MG
    Meisenheimer, TL
    Stevens, JE
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1996, 14 (04): : 2151 - 2157
  • [4] Remote plasma etching of silicon nitride and silicon dioxide using NF3/O2 gas mixtures
    Kastenmeier, BEE
    Matsuo, PJ
    Oehrlein, GS
    Langan, JG
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1998, 16 (04): : 2047 - 2056
  • [5] Ultrahigh-selectivity silicon nitride etch process using an inductively coupled plasma source
    Wang, Y
    Luo, L
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1998, 16 (03): : 1582 - 1587
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