High-speed modulation of 850-nm intracavity contacted shallow implant-apertured vertical-cavity surface-emitting lasers

被引：14

作者：

Dang, G ^{[1
]}

Hobson, WS

Chirovsky, LMF

Lopata, J

Tayahi, M

Chu, SNG

Ren, F

Pearton, SJ

机构：

[1] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA

[2] Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA

[3] Bell Labs, Lucent Technol, Holmdel, NJ 07733 USA

[4] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2001年 / 13卷 / 09期

关键词：

bit-error rate; 10; Gb/s; large-signal modulation; laser; small-signal modulation; VCSEL;

D O I：

10.1109/68.942648

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaAs-AlGaAs quantum-well (850 nm) vertical-cavity surface-emitting lasers, with lateral current injection and shallow implanted apertures, show small signal modulation bandwidths of at least 11 GHz and large signal data rates of at least 10 Gb/s. The devices achieved a maximum output power of 2.1 mW, with a threshold current and voltage of 1 mA and 1.71 V, respectively. The shallow implantation step provides photolithographically precise aperture formation (using O+ ions), for efficient lateral current injection into the quantum-well active region of the laser, from intracavity contacts. The device aperture was 7 mum in diameter, and the opening in the annular top contact was 13 mum in diameter. The optical spectrum showed several transverse modes.

引用

页码：924 / 926

页数：3

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