Mass production of very thin single-crystal silicon nitride nanobelts
被引:32
作者:
Gao, Fengmei
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Ningbo Univ Technol, Inst Mat, Ningbo 315016, Peoples R China
Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, Lab Excited State Proc, Changchun 130033, Peoples R China
Chinese Acad Sci, Grad Sch, Changchun 130033, Peoples R ChinaNingbo Univ Technol, Inst Mat, Ningbo 315016, Peoples R China
Gao, Fengmei
[1
,2
,3
]
Yang, Weiyou
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Ningbo Univ Technol, Inst Mat, Ningbo 315016, Peoples R ChinaNingbo Univ Technol, Inst Mat, Ningbo 315016, Peoples R China
Yang, Weiyou
[1
]
Fan, Yi
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Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, Lab Excited State Proc, Changchun 130033, Peoples R ChinaNingbo Univ Technol, Inst Mat, Ningbo 315016, Peoples R China
Fan, Yi
[2
]
An, Linan
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Univ Cent Florida, Adv Mat Proc & Anal Ctr, Orlando, FL 32816 USANingbo Univ Technol, Inst Mat, Ningbo 315016, Peoples R China
An, Linan
[4
]
机构:
[1] Ningbo Univ Technol, Inst Mat, Ningbo 315016, Peoples R China
[2] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, Lab Excited State Proc, Changchun 130033, Peoples R China
[3] Chinese Acad Sci, Grad Sch, Changchun 130033, Peoples R China
[4] Univ Cent Florida, Adv Mat Proc & Anal Ctr, Orlando, FL 32816 USA
We report the large-scale synthesis of very thin single-crystalline Si3N4 nanobelts with high yield via catalyst-assisted pyrolysis of polymeric precursors. The obtained nanobelts, which show a perfect crystal structure and smooth surface, are up to several millimeters in length with typical width and thickness of similar to 800 nm and tens of nanometers, respectively. It is believed that the nanobelts were grown via a vapor-solid process, in which Al catalyst played a key role. This result provides a possibility for mass producing high quality, very thin Si3N4 nanobelts. (C) 2007 Elsevier Inc. All rights reserved.
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Chinese Acad Sci, Grad Sch, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R ChinaChinese Acad Sci, Grad Sch, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China
Fang, XS
Ye, CH
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Chinese Acad Sci, Grad Sch, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R ChinaChinese Acad Sci, Grad Sch, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China
Ye, CH
Zhang, LD
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Chinese Acad Sci, Grad Sch, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R ChinaChinese Acad Sci, Grad Sch, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China
Zhang, LD
Xie, T
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Chinese Acad Sci, Grad Sch, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R ChinaChinese Acad Sci, Grad Sch, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China
机构:
Chinese Acad Sci, Grad Sch, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R ChinaChinese Acad Sci, Grad Sch, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China
Fang, XS
Ye, CH
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Chinese Acad Sci, Grad Sch, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R ChinaChinese Acad Sci, Grad Sch, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China
Ye, CH
Zhang, LD
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Chinese Acad Sci, Grad Sch, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R ChinaChinese Acad Sci, Grad Sch, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China
Zhang, LD
Xie, T
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Chinese Acad Sci, Grad Sch, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R ChinaChinese Acad Sci, Grad Sch, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China