Power efficiency of a semiconductor laser with an external cavity

被引:9
作者
Annovazzi-Lodi, V [1 ]
Merlo, S [1 ]
Moroni, S [1 ]
机构
[1] Univ Pavia, Dipartimento Elettron, I-27100 Pavia, Italy
关键词
external cavity laser; laser diode; optical feedback; power efficiency;
D O I
10.1023/A:1026565619195
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Optical feedback modifies the power vs. current diagram of a laser diode as well as its spectrum. Though optimization of the spectral characteristics is usually the main goal in the design of an external cavity source, power efficiency is also important, especially with relatively high power devices, where temperature variations due to dissipation can have an impact on the wavelength stability and on the laser lifetime. A useful parameter to describe the total power efficiency of the stabilized laser, relative to that of the solitary laser, is proposed in this paper. The dependence of this parameter on the characteristics of the active device, and of the external cavity, is investigated.
引用
收藏
页码:1343 / 1350
页数:8
相关论文
共 7 条
[1]   Dynamic behavior and locking of a semiconductor laser subjected to external injection [J].
Annovazzi-Lodi, V ;
Scire, A ;
Sorel, M ;
Donati, S .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1998, 34 (12) :2350-2357
[2]  
[Anonymous], LASER DIODE MODULATI
[3]   EXTERNAL-CAVITY FREQUENCY-STABILIZATION OF VISIBLE AND INFRARED SEMICONDUCTOR-LASERS FOR HIGH-RESOLUTION SPECTROSCOPY [J].
BOSHIER, MG ;
BERKELAND, D ;
HINDS, EA ;
SANDOGHDAR, V .
OPTICS COMMUNICATIONS, 1991, 85 (04) :355-359
[4]  
COLDREN LA, 1995, DIODE LASERS PHOTONI, P455
[5]   INFLUENCE OF OPTICAL FEEDBACK ON LASER FREQUENCY-SPECTRUM AND THRESHOLD CONDITIONS [J].
OSMUNDSEN, JH ;
GADE, N .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (03) :465-469
[6]   INTENSITY INSTABILITIES OF SEMICONDUCTOR-LASERS UNDER CURRENT MODULATION, EXTERNAL LIGHT INJECTION, AND DELAYED FEEDBACK [J].
SACHER, J ;
BAUMS, D ;
PANKNIN, P ;
ELSASSER, W ;
GOBEL, EO .
PHYSICAL REVIEW A, 1992, 45 (03) :1893-1905
[7]   EXTERNAL GRATING TUNABLE MQW LASER WITH WIDE TUNING RANGE OF 240 NM [J].
TABUCHI, H ;
ISHIKAWA, H .
ELECTRONICS LETTERS, 1990, 26 (11) :742-743