Spin and valley dependent delay time in MoS2 junction

被引：4

作者：

Sattaria, Farhad ^{[1
,2
]}

Mirershadi, Soghra ^{[3
]}

机构：

[1] Univ Mohaghegh Ardabil, Dept Phys, Fac Sci, POB 179, Ardebil, Iran

[2] Univ Mohaghegh Ardabil, Nanosci & Nanotechnol Res Grp, Ardebil, Iran

[3] Univ Mohaghegh Ardabil, Fac Adv Technol, Dept Engn Sci, Ardebil, Iran

来源：

PHYSICS LETTERS A | 2021年 / 406卷

关键词：

MoS2; junction; Dwell and group delay time; Extrinsic Rashba spin-orbit coupling; Valley and spin polarization; HETEROSTRUCTURES;

D O I：

10.1016/j.physleta.2021.127461

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Spin and valley-dependent delay times, including the group delay time and dwell time, in a MoS2-based junction with extrinsic Rashba spin-orbit coupling (ERSOC) are studied theoretically. We show that the dwell and group delay time strongly dependent on the spin and valley degree of freedom. The effects of the electrostatic barrier height and the angles of incidence of the electrons on the group delay and the dwell time are investigated. The results of these evaluations provide the ability to adjust the delay times with applications in highly efficient spintronic and valleytronic MoS2-based devices. We also found that the spin and valley-dependent transmission probability and the valley and spin polarization can be effectively controlled with the ERSOC and electrostatic potential strength. (C) 2021 Elsevier B.V. All rights reserved.

引用

页数：6

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