Synthesis and properties of new anionic photoacid generators bound polymer resists for e-beam and EUV lithography

被引：7

作者：

Wang, Mingxing ^{[1
]}

Lee, Cheng-Tsung ^{[2
]}

Henderson, Clifford L. ^{[2
]}

Yueh, Wang ^{[3
]}

Roberts, Jeanette M.

Gonsalves, Kenneth E. ^{[1
]}

机构：

[1] Univ N Carolina, Polymer Nanotechnol Lab, Ctr Optoelect & Opt Commun, Charlotte, NC 28223 USA

[2] Georgia Inst Technol, Atlanta, GA 30332 USA

[3] Intel Corp, Hillsboro, OR 97124 USA

来源：

ADVANCES IN RESIST MATERIALS AND PROCESSING TECHNOLOGY XXV, PTS 1 AND 2 | 2008年 / 6923卷

关键词：

anionic photoacid generators; polymer resistst; e-beam; EUV; LER;

D O I：

10.1117/12.769004

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A new series of methacrylate substituted benzene sulfonic photoacid generators (PAGs) and a perfluoro alkanesulfonic PAG, bound polymeric resists based on hydroxystyrene (HS) and 2-ethyl-2-adamantyl methacrylate (EA) were prepared and characterized. The acid yield of these PAG bound polymer resists was among the range of 54-81% under deep ultraviolet exposure (254 nm) that agrees well with the electron withdrawing effect of the substituents on the PAG anion for enhancing acid generation efficiency. The intrinsic lithography performance of these polymer-bound PAG resists showed sub-50 nm half-pitch resolution and < 5 nm LER (3 sigma).

引用

页数：7