Vertical GaN p-n diode with deeply etched mesa and the capability of avalanche breakdown

被引：71

作者：

Fukushima, Hayata ^{[1
]}

Usami, Shigeyoshi ^{[1
]}

Ogura, Masaya ^{[1
]}

Ando, Yuto ^{[1
]}

Tanaka, Atsushi ^{[2
,5
]}

Deki, Manato ^{[2
]}

Kushimoto, Maki ^{[1
]}

Nitta, Shugo ^{[2
]}

Honda, Yoshio ^{[2
]}

Amano, Hiroshi ^{[2
,3
,4
,5
]}

机构：

[1] Nagoya Univ, Grad Sch Engn, Nagoya, Aichi 4648603, Japan

[2] Nagoya Univ, Inst Mat & Syst Sustainabil, Nagoya, Aichi 4648601, Japan

[3] Nagoya Univ, Akasaki Res Ctr, Nagoya, Aichi 4648603, Japan

[4] Nagoya Univ, Venture Business Lab, Nagoya, Aichi 4648603, Japan

[5] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan

来源：

APPLIED PHYSICS EXPRESS | 2019年 / 12卷 / 02期

关键词：

POWER DIODES; FREESTANDING GAN; JUNCTION DIODES; CRYSTAL; GROWTH;

D O I：

10.7567/1882-0786/aafdb9

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A simple structure with high breakdown voltage and a low leakage current of a vertical GaN p-n diode on a GaN free-standing substrate is demonstrated. We describe a vertical p-n diode with a simple edge termination that has a drift layer etched deeply and vertically. A device simulation revealed that the electric field was more relaxed at the device edge and applied uniformly in the entire device with increasing etching depth. We fabricated the simulated structure and succeeded in reducing the leakage current and improving the breakdown voltage. With this structure, a stable avalanche breakdown can be observed. (C) 2019 The Japan Society of Applied Physics

引用

页数：4

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