Impact of crystal faces of 4H-SiC in SiO2/4H-SiC structures on interface trap densities and mobilities

被引：30

作者：

Hatakeyama, Tetsuo ^{[1
]}

Masuda, Teruyoshi ^{[1
]}

Sometani, Mitsuru ^{[1
]}

Harada, Shinsuke ^{[1
]}

Okamoto, Dai ^{[2
]}

Yano, Hiroshi ^{[2
]}

Yonezawa, Yoshiyuki ^{[1
]}

Okumura, Hajime ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Adv Power Elect Res Ctr, 16-1 Onogawa, Tsukuba, Ibaraki 3058569, Japan

[2] Univ Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 3058573, Japan

来源：

APPLIED PHYSICS EXPRESS | 2019年 / 12卷 / 02期

关键词：

CHANNEL MOBILITY; SIC/SIO2; INTERFACE; MOSFETS; 11(2)OVER-BAR0; RELIABILITY; STATE;

D O I：

10.7567/1882-0786/aaf283

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The impact of crystal faces of 4H-SiC in SiO2/4H-SiC structures on interface trap densities and mobilities were examined by a method that utilizes Hall effect measurements and split capacitance-voltage measurements to clarify the mechanism of high field-effect mobilities in SiO2/4H-SiC (0 (3) over bar3 (8) over bar) and (11 (2) over bar0). The characterization results show that high field-effect mobilities in nitrided SiO2/4H-SiC (0 (3) over bar3 (8) over bar) and (11 (2) over bar0) are caused by both lower interface trap densities near the conduction band edge and higher Hall mobilities compared to those in nitrided SiO2/4H-SiC (0001) and (000 (1) over bar). (C) 2019 The Japan Society of Applied Physics

引用

页数：5

共 41 条

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