Two-dimensional electron dynamics in GaN/AlGaN heterostructures

被引：0

作者：

Vitusevich, SA ^{[1
]}

Danylyuk, SV ^{[1
]}

Klein, N ^{[1
]}

Petrychuk, MV ^{[1
]}

Avksentyev, AY ^{[1
]}

Sokolov, VN ^{[1
]}

Kochelap, VA ^{[1
]}

Belyaev, AE ^{[1
]}

Tilak, V ^{[1
]}

Smart, J ^{[1
]}

Vertiatchikh, A ^{[1
]}

Eastman, LF ^{[1
]}

机构：

[1] Forschungszentrum Julich, Inst Schichten & Grenzflachen, D-52425 Julich, Germany

来源：

INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS | 2002年

关键词：

D O I：

暂无

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

This report addresses the study of two-dimensional electron gas (2DEG) transport at low and moderate electric fields. The devices under study are group-III nitride-based (AlGaN/GaN) gateless heterostructures grown on sapphire for HEMT applications. The transmission line model (TLM) patterns of different channel lengths L and the same channel width are used. We have developed a simple theoretical model to adequately describe the observed peculiarities in the I-V characteristics measured in steady-state and pulsed (10(-6) s) regimes. The effect of Joule heating of a heterostructure is clearly distinguished. The thermal impedances and the channel temperature rise caused by the Joule self-heating have been extracted for the devices of different L at different values of dissipated power.

引用

页码：401 / 404

页数：4

共 50 条

[41] Ferroelectric gate for control of transport properties of two-dimensional electron gas at AlGaN/GaN heterostructures
Stolichnov, I
Malin, L
Muralt, P
Setter, N
APPLIED PHYSICS LETTERS, 2006, 88 (04) : 1 - 3
[42] Two-dimensional electron gas transport anisotropy in N-polar GaN/AlGaN heterostructures
Umana-Membreno, G. A.
Fehlberg, T. B.
Kolluri, S.
Brown, D. F.
Keller, S.
Mishra, U. K.
Nener, B. D.
Faraone, L.
Parish, G.
APPLIED PHYSICS LETTERS, 2011, 98 (22)
[43] Nanoscale capacitance-voltage characterization of two-dimensional electron gas in AlGaN/GaN heterostructures
Koley, G
Lakshmanan, L
Tipirneni, N
Gaevski, M
Koudymov, A
Simin, G
Cha, HY
Spencer, MG
Khan, A
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2005, 44 (42-45): : L1348 - L1351
[44] Nanoscale capacitance-voltage characterization of two-dimensional electron gas in AlGaN/GaN heterostructures
Koley, G., 1600, Japan Society of Applied Physics (44): : 42 - 45
[45] Interface roughness governed negative magnetoresistances in two-dimensional electron gases in AlGaN/GaN heterostructures
Wang, Ting-Ting
Dong, Sining
Xiao, Zhi-Li
Li, Chong
Yue, Wen-Cheng
Liang, Bin-Xi
Xu, Fei-Fan
Wang, Yong-Lei
Xu, Sheng-Rui
Lu, Xiao-Li
Li, Jianhua
Wang, Chenguang
Yuan, Zixiong
Li, Song-Lin
Sun, Guo-Zhu
Liu, Bin
Lu, Hai
Wang, Hua-Bing
Kwok, Wai-Kwong
PHYSICAL REVIEW MATERIALS, 2021, 5 (06)
[46] Streaming transport of two dimensional electron gas in AlGaN/GaN/AlGaN double heterostructures
Liu, Dongfeng
Lin, Donghua
Huang, Guohong
Li, Zhizhong
Guo, Kangxian
SUPERLATTICES AND MICROSTRUCTURES, 2017, 112 : 57 - 63
[47] Photoreflectance investigations of AlGaN/GaN heterostructures with a two dimensional electron gas
Kudrawiec, R
Syperek, M
Misiewicz, J
Paszkiewicz, R
Paszkiewicz, B
Tlaczala, M
SUPERLATTICES AND MICROSTRUCTURES, 2004, 36 (4-6) : 633 - 641
[48] Optical investigations of two dimensional electron gas in the AlGaN/GaN heterostructures
Kudrawiec, R
Syperek, M
Misiewici, J
Pasaiewiez, R
Paszkiewicz, B
Tlaczala, M
Strupinski, W
E-MRS 2003 FALL MEETING, SYMPOSIA A AND C, PROCEEDINGS, 2004, 1 (02): : 378 - 381
[49] Acoustic phonon scattering of two-dimensional electrons in GaN/AlGaN heterostructures
Knap, W
Borovitskaya, E
Shur, MS
Hsu, L
Walukiewicz, W
Frayssinet, E
Lorenzini, P
Grandjean, N
Skierbiszewski, C
Prystawko, P
Leszczynski, M
Grzegory, I
APPLIED PHYSICS LETTERS, 2002, 80 (07) : 1228 - 1230
[50] Magnetoresistance analysis of two-dimensional hole gases in GaN/AlGaN/GaN double heterostructures
Yamada, S.
Fujimoto, A.
Yagi, S.
Narui, H.
Yamaguchi, E.
Imanaka, Y.
APPLIED PHYSICS LETTERS, 2024, 124 (26)

← 1 2 3 4 5 →