Two-dimensional electron dynamics in GaN/AlGaN heterostructures

被引：0

作者：

Vitusevich, SA ^{[1
]}

Danylyuk, SV ^{[1
]}

Klein, N ^{[1
]}

Petrychuk, MV ^{[1
]}

Avksentyev, AY ^{[1
]}

Sokolov, VN ^{[1
]}

Kochelap, VA ^{[1
]}

Belyaev, AE ^{[1
]}

Tilak, V ^{[1
]}

Smart, J ^{[1
]}

Vertiatchikh, A ^{[1
]}

Eastman, LF ^{[1
]}

机构：

[1] Forschungszentrum Julich, Inst Schichten & Grenzflachen, D-52425 Julich, Germany

来源：

INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS | 2002年

关键词：

D O I：

暂无

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

This report addresses the study of two-dimensional electron gas (2DEG) transport at low and moderate electric fields. The devices under study are group-III nitride-based (AlGaN/GaN) gateless heterostructures grown on sapphire for HEMT applications. The transmission line model (TLM) patterns of different channel lengths L and the same channel width are used. We have developed a simple theoretical model to adequately describe the observed peculiarities in the I-V characteristics measured in steady-state and pulsed (10(-6) s) regimes. The effect of Joule heating of a heterostructure is clearly distinguished. The thermal impedances and the channel temperature rise caused by the Joule self-heating have been extracted for the devices of different L at different values of dissipated power.

引用

页码：401 / 404

页数：4

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