High temperature thermal properties of thin tantalum nitride films

被引：34

作者：

Bozorg-Grayeli, Elah ^{[1
]}

Li, Zijian ^{[1
]}

Asheghi, Mehdi ^{[1
]}

Delgado, Gil ^{[2
]}

Pokrovsky, Alexander ^{[2
]}

Panzer, Matthew ^{[2
]}

Wack, Daniel ^{[2
]}

Goodson, Kenneth E. ^{[1
]}

机构：

[1] Stanford Univ, Dept Mech Engn, Stanford, CA 94305 USA

[2] KLA Tencor Corp, Milpitas, CA 95035 USA

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 26期

关键词：

DIFFUSION-BARRIERS; TAN; METALS;

D O I：

10.1063/1.3672098

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Tantalum Nitride (TaN) films carry high heat fluxes in a variety of applications including diffusion barriers in magnetoresistive random access memory and buffer/absorbers in extreme ultraviolet masks. The thicknesses of these films are usually of the same order as the thermal energy carrier mean free path, which complicates the study of heat conduction. This paper presents thermal (cross-plane) and electrical (in-plane) conductivity measurements on TaN films with thicknesses of 50, 75, and 100 nm. Picosecond thermoreflectance is used to extract the thermal boundary resistance between TaN and Al and the intrinsic thermal conductivity of TaN for temperatures of 300-700 K. The data and the relative importance of boundary resistances, electron-boundary scattering, and electron-defect scattering are interpreted using the electrical and thermal transport data. These data facilitate comparison of the phonon and electron contributions to thermal conduction in TaN. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3672098]

引用

页数：3

共 14 条

[1]

[Anonymous], 1979, SOLID STATE PHYS

[2] Predictions of thermal boundary conductance for systems of disordered solids and interfaces [J].

Beechem, Thomas ;

Hopkins, Patrick E. .

JOURNAL OF APPLIED PHYSICS, 2009, 106 (12)

[3] Characterization of Ta and TaN diffusion barriers beneath Cu layers using picosecond ultrasonics [J].

Bryner, Juerg ;

Profunser, Dieter M. ;

Vollmann, Jacqueline ;

Mueller, Elisabeth ;

Dual, Juerg .

ULTRASONICS, 2006, 44 (e1269-e1275) :E1269-E1275

[4] Analysis of heat flow in layered structures for time-domain thermoreflectance [J].

Cahill, DG .

REVIEW OF SCIENTIFIC INSTRUMENTS, 2004, 75 (12) :5119-5122

[5] MAGNETORESISTIVE MEMORY TECHNOLOGY [J].

DAUGHTON, JM .

THIN SOLID FILMS, 1992, 216 (01) :162-168

[6] Algorithm for solutions of the thermal diffusion equation in a stratified medium with a modulated heating source [J].

Feldman, A .

HIGH TEMPERATURES-HIGH PRESSURES, 1999, 31 (03) :293-298

[7] DIFFUSION BARRIER EFFECTS OF TRANSITION-METALS FOR CU/M/SI MULTILAYERS (M=CR, TI, NB, MO, TA, W) [J].

ONO, H ;

NAKANO, T ;

OHTA, T .

APPLIED PHYSICS LETTERS, 1994, 64 (12) :1511-1513

[8] Thermal Properties of Ultrathin Hafnium Oxide Gate Dielectric Films [J].

Panzer, Matthew A. ;

Shandalov, Michael ;

Rowlette, Jeremy A. ;

Oshima, Yasuhiro ;

Chen, Yi Wei ;

McIntyre, Paul C. ;

Goodson, Kenneth E. .

IEEE ELECTRON DEVICE LETTERS, 2009, 30 (12) :1269-1271

[9] Characteristics of ultrathin Ta and TaN films [J].

Rossnagel, SM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2002, 20 (06) :2328-2336

[10] THE MEAN FREE PATH OF ELECTRONS IN METALS [J].

SONDHEIMER, EH .

ADVANCES IN PHYSICS, 1952, 1 (01) :1-42

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