Electron transport simulation in resonant-tunneling GaN/AlGaN heterostructures

被引：8
|
作者：
Egorkin, V. I. [1 ]
Zhuravlev, M. N. [1 ]
Kapaev, V. V. [2 ]
机构：
[1] Tech Univ, Moscow State Inst Elect Engn, Moscow, Russia
[2] Russian Acad Sci, Lebedev Phys Inst, Moscow, Russia
来源：
SEMICONDUCTORS | 2011年 / 45卷 / 13期
基金：
俄罗斯基础研究基金会;
关键词：
MOLECULAR-BEAM EPITAXY;
D O I：
10.1134/S1063782611130100
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
A numerical method for electron transport calculations in resonant-tunneling GaN/AlGaN heterostructures has been developed on the basis of a self-consistent solution of the Schrodinger and Poisson equations. Dependences of the system's transmission coefficient on the external field and of the peak current on the ratio between the well and barrier widths have been studied for a double-barrier resonant-tunneling diode. For technical applications, the optimal values of the structure's parameters have been found.
引用
收藏
页码：1638 / 1641
页数：4
相关论文
共 50 条
  • [1] Electron transport simulation in resonant-tunneling GaN/AlGaN heterostructures
    V. I. Egorkin
    M. N. Zhuravlev
    V. V. Kapaev
    Semiconductors, 2011, 45 : 1638 - 1641
  • [2] Theoretical Modeling of Triple-Barrier Resonant-Tunneling Diodes Based on AlGaN/GaN Heterostructures
    Rong, Taotao
    Yang, Lin-An
    Zhao, Ziyue
    Zhang, Kai
    Hao, Yue
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2019, 216 (23):
  • [3] Resonant-tunneling electron emitter in an AIN/GaN system
    Ishida, A
    Inoue, Y
    Fujiyasu, H
    APPLIED PHYSICS LETTERS, 2005, 86 (18) : 1 - 3
  • [4] Vertical electron transport in GaN/AlGaN heterostructures
    Reklaitis, A
    ACTA PHYSICA POLONICA A, 2005, 107 (02) : 261 - 266
  • [5] Ballistic transport in GaN/AlGaN resonant tunneling diodes
    Sakr, S.
    Warde, E.
    Tchernycheva, M.
    Julien, F. H.
    JOURNAL OF APPLIED PHYSICS, 2011, 109 (02)
  • [6] ANALYSIS OF RESONANT-TUNNELING TRANSPORT
    SHEN, GD
    XU, DX
    WILLANDER, M
    HANSSON, GV
    PHYSICAL REVIEW B, 1992, 45 (16): : 9424 - 9427
  • [7] Vertical Transport in GaN/AlGaN Resonant Tunneling Diodes and Superlattices
    Elias Warde
    Salam Sakr
    Maria Tchernycheva
    Francois Henry Julien
    Journal of Electronic Materials, 2012, 41 : 965 - 970
  • [8] Vertical Transport in GaN/AlGaN Resonant Tunneling Diodes and Superlattices
    Warde, Elias
    Sakr, Salam
    Tchernycheva, Maria
    Julien, Francois Henry
    JOURNAL OF ELECTRONIC MATERIALS, 2012, 41 (05) : 965 - 970
  • [9] Deep levels and electron transport in AlGaN/GaN heterostructures
    I. V. Antonova
    V. I. Polyakov
    A. I. Rukavishnikov
    V. G. Mansurov
    K. S. Zhuravlev
    Semiconductors, 2008, 42 : 52 - 58
  • [10] The investigation of properties of electron transport in AlGaN/GaN heterostructures
    Danylyuk, SV
    Vitusevich, SA
    Podor, B
    Belyaev, AE
    Avksentyev, AY
    Tilak, V
    Smart, J
    Vertiatchikh, A
    Eastman, LF
    MICROELECTRONICS JOURNAL, 2003, 34 (5-8) : 575 - 577
12345