L-band, high efficiency 25 watt power amplifier using PHEMT for base station system

被引：2

作者：

Wang, YH ^{[1
]}

Liu, HZ ^{[1
]}

Huang, HK ^{[1
]}

Wang, CC ^{[1
]}

Chang, CH ^{[1
]}

Wu, W ^{[1
]}

Wu, CL ^{[1
]}

Chang, CS ^{[1
]}

机构：

[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 70101, Taiwan

来源：

EDMO2003: 11TH IEEE INTERNATIONAL SYMPOSIUM ON ELECTRON DEVICES FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS | 2003年

关键词：

power amplifier; PHEMT; PHS; base station; pre-matched FET; ACP;

D O I：

10.1109/EDMO.2003.1259986

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, a 1.9 GHz 25 watt high power amplifier using AlGaAs/InGaAs/GaAs PHEMT device for PHS base station applications is demonstrated. This amplifier utilizes a pre-matched FET which is composed of only a single 50 mm FET device and a NUS capacitor in a CuW flange package with other matching circuits on the FR4 PCB. Under 10 Volts and 4 A de bias condition, the amplifier has achieved 12.5 dB small-signal gain, 43.7 dBm 1-dB gain compression power with 43% power-added efficiency (PAE) and 44 dBm saturated output power with 41% PAE. In addition, high linearity with 53 dBm third-order intercept point is achieved. The ACP at 600 KHz offset from 1.906 GHz when operating at 39 dBm output power with pi/4-DQPSK signal is better than 71 dBc.

引用

页码：76 / 82

页数：7

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