Lead-free piezoelectric BiFeO3-BaTiO3 thin film with high Curie temperature

被引：12

作者：

Lee, Myang Hwan ^{[1
]}

Kim, Da Jeong ^{[1
]}

Park, Jin Su ^{[1
]}

Kim, Myong-Ho ^{[1
]}

Song, Tae Kwon ^{[1
,2
]}

Kumar, Shalendra ^{[2
]}

Kim, Won-Jeong ^{[3
]}

Do, Dalhyun ^{[4
]}

Hwang, Inrok ^{[5
]}

Park, Bae Ho ^{[5
]}

Choi, Kyu Sang ^{[6
]}

机构：

[1] Changwon Natl Univ, Sch Mat Sci & Engn, Chang Won 51140, Gyeongnam, South Korea

[2] Changwon Natl Univ, Inst Basic Sci, Chang Won 51140, Gyeongnam, South Korea

[3] Changwon Natl Univ, Dept Phys, Chang Won 51140, Gyeongnam, South Korea

[4] Keimyung Univ, Dept Adv Mat Engn, Daegu 42601, South Korea

[5] Konkuk Univ, Div Quantum Phases & Devices, Dept Phys, Seoul 05029, South Korea

[6] Sunchon Natl Univ, Dept Phys Educ, Sunchon 57922, Jeonnam, South Korea

来源：

CURRENT APPLIED PHYSICS | 2016年 / 16卷 / 10期

基金：

新加坡国家研究基金会;

关键词：

BiFeO3; BaTiO3; Ferroelectric; Piezoelectric; Curie temperature; ELECTRICAL-PROPERTIES; STRESS; BIFEO3;

D O I：

10.1016/j.cap.2016.08.008

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Polycrystalline 0.67Bi(1.05)FeO(3)-0.33BaTiO(3) (BF33BT) lead-free piezoelectric thin film is fabricated on Pt(111)/Ti/SiO2/Si(100) substrate by using pulsed laser deposition technique. The remnant polarization (2P(r)) and coercive field (2E(C)) observed from polarization hysteresis (P-E) loop are 18 mu C/cm(2) and 208 kV/cm, respectively. The local piezoelectric constant (d(33,PFM)) of BF33BT thin film is 92.5 pm/V which is as high as lead-based piezoelectric thin film results. From the temperature dependent dielectric constant result, the Curie temperature is 405 degrees C. These results show that BF33BT thin film is a promising candidate for lead-free piezoelectric nano- and micro-devices with high Curie temperature. (C) 2016 Published by Elsevier B.V.

引用

页码：1449 / 1452

页数：4

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