Lead-free piezoelectric BiFeO3-BaTiO3 thin film with high Curie temperature

被引：12
作者：
Lee, Myang Hwan [1 ]
Kim, Da Jeong [1 ]
Park, Jin Su [1 ]
Kim, Myong-Ho [1 ]
Song, Tae Kwon [1 ,2 ]
Kumar, Shalendra [2 ]
Kim, Won-Jeong [3 ]
Do, Dalhyun [4 ]
Hwang, Inrok [5 ]
Park, Bae Ho [5 ]
Choi, Kyu Sang [6 ]
机构：
[1] Changwon Natl Univ, Sch Mat Sci & Engn, Chang Won 51140, Gyeongnam, South Korea
[2] Changwon Natl Univ, Inst Basic Sci, Chang Won 51140, Gyeongnam, South Korea
[3] Changwon Natl Univ, Dept Phys, Chang Won 51140, Gyeongnam, South Korea
[4] Keimyung Univ, Dept Adv Mat Engn, Daegu 42601, South Korea
[5] Konkuk Univ, Div Quantum Phases & Devices, Dept Phys, Seoul 05029, South Korea
[6] Sunchon Natl Univ, Dept Phys Educ, Sunchon 57922, Jeonnam, South Korea
来源：
CURRENT APPLIED PHYSICS | 2016年 / 16卷 / 10期
基金：
新加坡国家研究基金会;
关键词：
BiFeO3; BaTiO3; Ferroelectric; Piezoelectric; Curie temperature; ELECTRICAL-PROPERTIES; STRESS; BIFEO3;
D O I：
10.1016/j.cap.2016.08.008
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Polycrystalline 0.67Bi(1.05)FeO(3)-0.33BaTiO(3) (BF33BT) lead-free piezoelectric thin film is fabricated on Pt(111)/Ti/SiO2/Si(100) substrate by using pulsed laser deposition technique. The remnant polarization (2P(r)) and coercive field (2E(C)) observed from polarization hysteresis (P-E) loop are 18 mu C/cm(2) and 208 kV/cm, respectively. The local piezoelectric constant (d(33,PFM)) of BF33BT thin film is 92.5 pm/V which is as high as lead-based piezoelectric thin film results. From the temperature dependent dielectric constant result, the Curie temperature is 405 degrees C. These results show that BF33BT thin film is a promising candidate for lead-free piezoelectric nano- and micro-devices with high Curie temperature. (C) 2016 Published by Elsevier B.V.
引用
收藏
页码：1449 / 1452
页数：4
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