Evolution of optical properties with deposition time of silicon nitride and diamond-like carbon films deposited by radio-frequency plasma-enhanced chemical vapor deposition method

被引:43
作者
Smietana, Mateusz [1 ,2 ]
Bock, Wojtek J. [2 ]
Szmidt, Jan [1 ]
机构
[1] Warsaw Univ Technol, Inst Microelect & Optoelect, PL-00662 Warsaw, Poland
[2] Univ Quebec Outaouais, Ctr Rech Photon, Gatineau, PQ J8X 3X7, Canada
基金
加拿大自然科学与工程研究理事会;
关键词
Thin films; Plasma-enhanced chemical vapor deposition; Optical properties; Optical devices; Silicon nitride; Diamond-like carbon; Ellipsometry; THIN-FILMS; WAVE-GUIDES; PECVD; THICKNESS; OPTIMIZATION; FABRICATION; SENSORS; SURFACE; DESIGN; INDEX;
D O I
10.1016/j.tsf.2011.04.032
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The paper presents investigations of the optical properties of thin high-refractive-index silicon nitride (SiNx) and diamond-like carbon (DLC) films deposited by the radio-frequency plasma-enhanced chemical vapor deposition method for applications in tuning the functional properties of optical devices working in the infrared spectral range, e.g., optical sensors, filters or resonators. The deposition technique offers the ability to control the film's optical properties and thickness on the nanometer scale. We obtained thin, high-refractive-index films of both types at deposition temperatures below 350 degrees C, which is acceptable under the thermal budget of most optical devices. In the case of SiNx films, it was found that for short deposition processes (up to 5 min long) the refractive index of the film increases in parallel with its thickness (up to 50 nm), while for longer processes the refractive index becomes almost constant For DLC films, the effect of refractive index increase was observed up to 220 nm in film thickness. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码:6339 / 6343
页数:5
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