Luminescence properties of cu and CU,Al doped ZnS quantum dots

被引:0
作者
Zhang, Xiaosong [1 ]
Li, Lan [1 ]
Dong, Xiaoyi
Kai, Guiyun
Dong, Dongqing [1 ]
Zhang, Yanfang [1 ]
Li, Jiangyong [1 ,2 ]
机构
[1] Tianjin Univ Technol, Tianjin Key Lab Photoelect Mat & Devices, Tianjin 300191, Peoples R China
[2] Univ Calif Los Angeles, Dept Mat Sci & Engn, Los Angeles, CA 90095 USA
来源
OPTOELECTRONIC MATERIALS AND DEVICES II | 2007年 / 6782卷
基金
中国国家自然科学基金;
关键词
ZnS : Cu; ZnS; Cu; Al; quantum dots; donor level; acceptor level; photoluminescence;
D O I
10.1117/12.745742
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Free-standing ZnS:Cu and ZnS:Cu,Al quantum dots were prepared in the aqueous medium from readily available precursors. The construction, morphology and luminescence properties of the ZnS:Cu and ZnS:Cu,Al quantum dots were evaluated by XRD,TEM and photoluminescence spectra. The average particle size was calculated using the Scherrer formula to be 5nm, which is also observed from HRTEM image. In PL spectra, 0.7% Cu and 0.4% Cu-doped ZnS:Cu quantum dots have emission peak around 470 nm and 500 nm, which attributed to the transition from the shallow donor level (sulfur vacancy) to the a level and t(2) level of Cu2+ respectively. And PL spectra of ZnS:Cu,AI quantum dots is similar with the PL of ZnS:Cu quantum dots, but the luminescence intensity of quantum dots ZnS:Cu,Al increase, which arise from that Al3+ ions as co-activated enhance donor level.
引用
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页数:6
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