High temperature reliability on automotive power modules verified by power cycling tests up to 150°C

被引:21
作者
Coquery, G [1 ]
Lefranc, G
Licht, T
Lallemand, R
Seliger, N
Berg, H
机构
[1] INRETS, LTN, Arcueil, France
[2] Siemens AG, Corp Technol Dept, D-81730 Munich, Germany
[3] Eupec GmbH, D-59568 Warstein, Germany
关键词
D O I
10.1016/S0026-2714(03)00318-4
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Future hybrid automotive power train might be integrated to the internal engine combustion environment, due to cost objectives only one water cooling circuitry can be used, this designing involve high temperature working conditions for power electronic semiconductor and packaging. This paper describes the methodology used for different accelerated power cycling tests (PCT) realised on three phase integrated power inverters with a complete monitoring of the 6 switches and on a half bridge. The first results at 150degreesC junction temperature are presented and discussed for the two semiconductor technologies, IGBT and MOSFET modules, considering the objectives of lifetime estimation. (C) 2003 Elsevier Ltd. All rights reserved.
引用
收藏
页码:1871 / 1876
页数:6
相关论文
共 6 条
  • [1] A novel thermomechanics-based lifetime prediction model for cycle fatigue failure mechanisms in power semiconductors
    Ciappa, M
    Carbognani, F
    Cova, P
    Fichtner, W
    [J]. MICROELECTRONICS RELIABILITY, 2002, 42 (9-11) : 1653 - 1658
  • [2] Power module lifetime estimation from chip temperature direct measurement in an automotive traction inverter
    Coquery, G
    Carubelli, S
    Ousten, JP
    Lallemand, R
    Lecoq, F
    Lhotellier, D
    de Viry, V
    Dupuy, P
    [J]. MICROELECTRONICS RELIABILITY, 2001, 41 (9-10) : 1695 - 1700
  • [3] Failure criteria for long term Accelerated Power Cycling Test linked to electrical turn off SOA on IGBT module. A 4000 hours test on 1200A-3300V module with AlSiC base plate.
    Coquery, G
    Lallemand, R
    [J]. MICROELECTRONICS RELIABILITY, 2000, 40 (8-10) : 1665 - 1670
  • [4] Reliability testing of high-power multi-chip IGBT modules
    Lefranc, G
    Licht, T
    Schultz, HJ
    Beinert, R
    Mitic, G
    [J]. MICROELECTRONICS RELIABILITY, 2000, 40 (8-10) : 1659 - 1663
  • [5] SCHUBERT A, P 34 INT S MICR IMAP
  • [6] Reliable power electronics for automotive applications
    Seliger, N
    Wolfgang, E
    Lefranc, G
    Berg, H
    Licht, T
    [J]. MICROELECTRONICS RELIABILITY, 2002, 42 (9-11) : 1597 - 1604