VECSEL threshold and output power-shutoff dependence on the carrier recombination rates

被引：18

作者：

Zakharian, AR ^{[1
]}

Hader, J

Moloney, JV

Koch, SW

机构：

[1] Univ Arizona, ACMS & Opt Sci Ctr, Tucson, AZ 85721 USA

[2] Univ Marburg, Dept Phys, D-35032 Marburg, Germany

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2005年 / 17卷 / 12期

关键词：

auger recombination; optically pumped laser; semiconductor microcavity; vertical-external-cavity surface-emitting laser (VECSEL);

D O I：

10.1109/LPT.2005.858087

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We compute the lasing threshold and thermally driven power-shutoff characteristics of optically pumped vertical-external-cavity surface-emitting lasers. Using a quantitative numerical model, variations in the threshold and shutoff power levels are contrasted for the two approaches to the computation of the carrier recombination rates: using the AN + BN2 + CN3 model with the temperature and carrier density independent coefficients, versus using recombination rates precomputed within the framework of the microscopic many-body theory.

引用

页码：2511 / 2513

页数：3

共 12 条

[1] High power and good beam quality at 980 nm from a vertical external-cavity surface-emitting laser [J].

Alford, WJ ;

Raymond, TD ;

Allerman, AA .

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 2002, 19 (04) :663-666

[2] High power optically pumped semiconductor lasers. [J].

Chilla, J ;

Butterworth, S ;

Zeitschel, A ;

Charles, J ;

Caprara, A ;

Reed, M ;

Spinelli, L .

SOLID STATE LASERS XIII: TECHNOLOGY AND DEVICES, 2004, 5332 :143-150

[3] High-power optically pumped VECSEL using a double-well resonant periodic gain structure [J].

Fan, L ;

Hader, J ;

Schillgalies, M ;

Fallahi, M ;

Zakharian, AR ;

Moloney, JV ;

Bedford, R ;

Murray, JT ;

Koch, SW ;

Stolz, W .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2005, 17 (09) :1764-1766

[4] Microscopic theory of gain and spontaneous emission in GaInNAs laser material [J].

Hader, J ;

Koch, SW ;

Moloney, JV .

SOLID-STATE ELECTRONICS, 2003, 47 (03) :513-521

[5]

HADER J, 2005, UNPUB IEEE J QUANTUM

[6] High-power passively mode-locked semiconductor lasers [J].

Häring, R ;

Paschotta, R ;

Aschwanden, A ;

Gini, E ;

Morier-Genoud, F ;

Keller, U .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 2002, 38 (09) :1268-1275

[7] Thermal management in vertical-external-cavity surface-emitting lasers: Finite-element analysis of a heatspreader approach [J].

Kemp, AJ ;

Valentine, GJ ;

Hopkins, JM ;

Hastie, JE ;

Smith, SA ;

Calvez, S ;

Dawson, MD ;

Burns, D .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 2005, 41 (02) :148-155

[8] Design and characteristics of high-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams [J].

Kuznetsov, M ;

Hakimi, F ;

Sprague, R ;

Mooradian, A .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1999, 5 (03) :561-573

[9]

LINDBERG H, UNPUB IEEE J SEL TOP

[10] 8-W high-efficiency continuous-wave semiconductor disk laser at 1000 nm [J].

Lutgen, S ;

Albrecht, T ;

Brick, P ;

Reill, W ;

Luft, J ;

Späth, W .

APPLIED PHYSICS LETTERS, 2003, 82 (21) :3620-3622

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