Electrical properties of SOI n-MOSFETs under nonisothermal lattice temperature

被引：5
作者：
Kim, JY [1 ]
Park, YJ [1 ]
Min, HS [1 ]
机构：
[1] SEOUL NATL UNIV,INTERUNIV SEMICOND RES CTR,SEOUL 151742,SOUTH KOREA
来源：
SOLID-STATE ELECTRONICS | 1997年 / 41卷 / 04期
关键词：
TRANSPORT MODEL; MOBILITY; SILICON; CHANNEL; RANGE;
D O I：
10.1016/S0038-1101(96)00216-X
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A physically rigorous device model for both carrier and lattice heat transports has been incorporated into a general purpose device simulation program, SNU-2D. In the model, the carrier mobility is explicitly expressed as a separate function of lattice and carrier temperatures. As an example for a nonisothermal problem, SOI MOSFETs have been considered. The negative slope and kink effect in the I-DS-V-DS characteristics as well as hysteresis in the I-DS-V-GS characteristics are well predicted by the developed model including the temperature dependence of the electron saturation velocity and degradation of the temperature dependence mobility. (C) 1997 Elsevier Science Ltd.
引用
收藏
页码：567 / 573
页数：7
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