Nb2O5 Blocking Layer for High Open-circuit Voltage Perovskite Solar Cells

被引：74

作者：

Kogo, Atsushi ^{[1
]}

Numata, Youhei ^{[1
]}

Ikegami, Masashi ^{[1
]}

Miyasaka, Tsutomu ^{[1
]}

机构：

[1] Toin Univ Yokohama, Grad Sch Engn, Aoba Ku, Yokohama, Kanagawa 2258503, Japan

来源：

CHEMISTRY LETTERS | 2015年 / 44卷 / 06期

基金：

日本科学技术振兴机构;

关键词：

ORGANOMETAL HALIDE PEROVSKITES; NANOPOROUS ELECTRODES; DYE;

D O I：

10.1246/cl.150167

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A solution-processed Nb2O5 film was employed as a thin blocking layer (BL) in CH3NH3PbI3-xClx-based solar cells for the first time. A cell with Nb2O5 BL exhibited larger open-circuit photovoltage than a cell with conventional TiO2 BL. Dark current behavior suggests that recombination from F-doped tin oxide electrode to perovskite layer was efficiently blocked by the Nb2O5 BL.

引用

页码：829 / 830

页数：2

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