GaN-based microcavity polariton light emitting diodes

被引：0

作者：

Lu, Tien-Chang ^{[1
]}

Lai, Ying-Yu ^{[1
]}

Huang, Si-Wei ^{[1
]}

Chen, Jun-Rong ^{[1
]}

Wu, Yung-Chi ^{[1
]}

Lin, Shiang-Chi ^{[1
]}

Wang, Shing-Chung ^{[1
]}

Yamamoto, Yoshihisa ^{[2
]}

机构：

[1] Natl Chiao Tung Univ, Dept Photon, Hsinchu 300, Taiwan

[2] Stanford Univ, EL Ginzton Lab, Stanford, CA 94305 USA

来源：

LIGHT-EMITTING DIODES: MATERIALS, DEVICES, AND APPLICATIONS FOR SOLID STATE LIGHTING XVI | 2012年 / 8278卷

关键词：

GaN; exciton-polariton; light emitting diode (LED); Rabi splitting; BOSE-EINSTEIN CONDENSATION; ROOM-TEMPERATURE; SEMICONDUCTOR MICROCAVITY; EXCITON POLARITONS; LASERS;

D O I：

10.1117/12.908343

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Here we report the first realization of a current injection microcavity GaN exciton-polariton light emitting diode (LED) operating under room temperature (RT). The hybrid microcavity structure consists of InGaN/GaN quantum wells sandwiched between bottom epitaxial DBR and top dielectric DBR. The anti-crossing behavior of polariton LED denotes a clear signature of the strong interaction between excitons and cavity photons.

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页数：7

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