Image contrast of lattice defects in X-ray topography by resonant scattering

被引：8

作者：

Negishi, R

Yoshizawa, M

Zhou, SM

Matsumoto, I

Fukamachi, T

Kawamura, T

机构：

[1] Saitama Inst Technol, Osato, Saitama 3690293, Japan

[2] Yamanashi Univ, Yamanashi 4008510, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2001年 / 40卷 / 8B期

关键词：

X-ray topography; resonant scattering; Borrmann effect; dynamical diffraction; GaAs;

D O I：

10.1143/JJAP.40.L884

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In order to observe the effect of atomic resonant scattering on X-ray topography, topographs of a GaAs crystal with the 200 reflection have been taken using synchrotron X-rays with energy near the K-absorption edges of Ga and As. The X-ray energy has been tuned to four typical resonant scattering conditions. It is shown that the contrast of lattice defects observed in topographs chances with the resonant scattering conditions. Such topography taken under resonant scattering is useful for studying lattice defects in crystals.

引用

页码：L884 / L887

页数：4

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