Dielectric temperature stability and energy storage performance of B-site Sn4+-doped BNKBST ceramics

被引:12
作者
Dong, Guangzhi [1 ,2 ]
Fan, Huiqing [1 ]
Jia, Yuxin [1 ]
Liu, Huan [1 ]
机构
[1] Northwestern Polytech Univ, State Key Lab Solidificat Proc, Sch Mat Sci & Engn, Xian 710072, Peoples R China
[2] Univ Wollongong, Inst Superconducting & Elect Mat, Australia Inst Innovat Mat, Wollongong, NSW 2522, Australia
基金
中国博士后科学基金;
关键词
LARGE-STRAIN; DENSITY; MULTILAYERS; (BA; SR)TIO3; EFFICIENCY; PROPERTY; FIELD; SN;
D O I
10.1007/s10854-020-03918-2
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The 0.65Bi(0.5)Na(0.25)K(0.25)TiO(3)-0.35Bi(0.2)Sr(0.7)Ti(1-x)Sn(x)O(3)(BNKBST-xSn) ceramics were synthesized via a solid-phase reactive sintering technique. The effects of doping Sn(4+)ions on the energy storage, dielectric, ferroelectric properties and microstructure characteristics for BNKBST ceramics were systematically studied. Remarkably, BNKBST-0.02Sn exhibits a superior dielectric temperature stability, manifested as the change rate for dielectric constant increment epsilon/epsilon(150 degrees C)is smaller than 15% during a very wide temperature range of 30-400 degrees C. In addition, BNKBST-0.02Sn ceramic achieves a high energy storage densityW(rec) = 0.81 J/cm(3)(under the electric field 80 kV/cm) with an outstanding energy storage efficiency 89.5%, which make it reasonable to be applied in dielectric capacitors due to its excellent dielectric thermal stability and energy storage properties. The electrical conductivity behaviors of BNKBST-xSn were also analyzed with the assistance of impedance spectroscopy.
引用
收藏
页码:13620 / 13627
页数:8
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