Dielectric temperature stability and energy storage performance of B-site Sn4+-doped BNKBST ceramics

被引：12

作者：

Dong, Guangzhi ^{[1
,2
]}

Fan, Huiqing ^{[1
]}

Jia, Yuxin ^{[1
]}

Liu, Huan ^{[1
]}

机构：

[1] Northwestern Polytech Univ, State Key Lab Solidificat Proc, Sch Mat Sci & Engn, Xian 710072, Peoples R China

[2] Univ Wollongong, Inst Superconducting & Elect Mat, Australia Inst Innovat Mat, Wollongong, NSW 2522, Australia

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2020年 / 31卷 / 16期

基金：

中国博士后科学基金;

关键词：

LARGE-STRAIN; DENSITY; MULTILAYERS; (BA; SR)TIO3; EFFICIENCY; PROPERTY; FIELD; SN;

D O I：

10.1007/s10854-020-03918-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The 0.65Bi(0.5)Na(0.25)K(0.25)TiO(3)-0.35Bi(0.2)Sr(0.7)Ti(1-x)Sn(x)O(3)(BNKBST-xSn) ceramics were synthesized via a solid-phase reactive sintering technique. The effects of doping Sn(4+)ions on the energy storage, dielectric, ferroelectric properties and microstructure characteristics for BNKBST ceramics were systematically studied. Remarkably, BNKBST-0.02Sn exhibits a superior dielectric temperature stability, manifested as the change rate for dielectric constant increment epsilon/epsilon(150 degrees C)is smaller than 15% during a very wide temperature range of 30-400 degrees C. In addition, BNKBST-0.02Sn ceramic achieves a high energy storage densityW(rec) = 0.81 J/cm(3)(under the electric field 80 kV/cm) with an outstanding energy storage efficiency 89.5%, which make it reasonable to be applied in dielectric capacitors due to its excellent dielectric thermal stability and energy storage properties. The electrical conductivity behaviors of BNKBST-xSn were also analyzed with the assistance of impedance spectroscopy.

引用

页码：13620 / 13627

页数：8

共 53 条

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