1/f noise of SnO2 nanowire transistors

被引：46

作者：

Ju, Sanghyun ^{[3
]}

Chen, Pochiang ^{[4
]}

Zhou, Chongwu ^{[4
]}

Ha, Young-geun ^{[5
,6
,7
]}

Facchetti, Antonio ^{[5
,6
,7
]}

Marks, Tobin J. ^{[5
,6
,7
]}

Kim, Sun Kook ^{[1
,2
]}

Mohammadi, Saeed ^{[1
,2
]}

Janes, David B. ^{[1
,2
]}

机构：

[1] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA

[2] Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA

[3] Kyonggi Univ, Dept Phys, Suwon 442760, Kyonggi Do, South Korea

[4] Univ So Calif, Dept Elect Engn, Los Angeles, CA 90089 USA

[5] Northwestern Univ, Dept Chem, Evanston, IL 60208 USA

[6] Northwestern Univ, Mat Res Ctr, Evanston, IL 60208 USA

[7] Northwestern Univ, Inst Nanoelect & Comp, Evanston, IL 60208 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 24期

基金：

美国国家航空航天局; 美国国家科学基金会;

关键词：

D O I：

10.1063/1.2947586

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The low frequency (1/f) noise in single SnO2 nanowire transistors was investigated to access semiconductor-dielectric interface quality. The amplitude of the current noise spectrum (S-I) is found to be proportional to I-d(2) in the transistor operating regime. The extracted Hooge's constants (alpha(H)) are 4.5x10(-2) at V-ds=0.1 V and 5.1x10(-2) at V-ds=1 V, which are in general agreement with our prior studies of nanowire/nanotube transistors characterized in ambient conditions. Furthermore, the effects of interface states and contacts on the noise are also discussed.

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页数：3

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