Characterizations of Enhancement-Mode Double Heterostructure GaN HEMTs With Gate Field Plates

被引：19

作者：

Lee, Chun-Hsun ^{[1
]}

Lin, Wei-Ren ^{[1
]}

Lee, Yu-Hsuan ^{[1
]}

Huang, Jian-Jang ^{[2
,3
]}

机构：

[1] Natl Taiwan Univ, Grad Inst Photon & Optoelect, Taipei 10617, Taiwan

[2] Natl Taiwan Univ, Grad Inst Photon & Optoelect, Taipei 10617, Taiwan

[3] Natl Taiwan Univ, Dept Elect Engn, Taipei 10617, Taiwan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2018年 / 65卷 / 02期

关键词：

Enhancement mode (E-mode); field plate; GaN; high-electron mobility transistor; VOLTAGE EXTRACTION METHODS; THRESHOLD-VOLTAGE; ALGAN/GAN HEMTS; DEVICE; POWER;

D O I：

10.1109/TED.2017.2786479

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

With the purpose to increase the threshold voltage of the enhancement mode GaN high-electron mobility transistors, we fabricated devices with gate field plates on the p-GaN/AlGaN/GaN/AlGaN double heterostructures. We observed an existence of a subthreshold region from the current-voltage transfer curves. The threshold voltage of the device extractedbased on linear extrapolation method is much higher than that of a typical device without a gate field plate. We investigated electrical properties based on carrier distributions with the influence of gate electric field at different channel regions.

引用

页码：488 / 492

页数：5

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