Spatial and temperature dependence of carrier recombination in an InGaAs/InP heterostructure

被引：20

作者：

Monte, AFG ^{[1
]}

da Silva, SW

Cruz, JMR

Morais, PC

Cox, HM

机构：

[1] Univ Brasilia, Inst Fis Nucl Fis Aplicada, BR-70910900 Brasilia, DF, Brazil

[2] Lucent Technol, Murray Hill, NJ 07974 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1999年 / 85卷 / 05期

关键词：

D O I：

10.1063/1.369631

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The microluminescence surface scan technique has been used to investigate ambipolar carrier diffusion, photon diffusion, and photocarrier recombination in a nominally undoped InGaAs bulk layer lattice matched to InP grown by vapor levitation epitaxy. Measurements taken at different temperatures between 75 and 300 K are discussed in terms of the relative contribution of the two distinct mechanisms to the spectrally integrated luminescence intensity, namely, photon diffusion and photocarrier diffusion. (C) 1999 American Institute of Physics. [S0021-8979(99)06304-5].

引用

页码：2866 / 2869

页数：4

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