Phase change memory - Opportunities and challenges

被引：3
作者：
Rajendran, Bipin
Lung, Hsiang-Lan
Lam, Chung
机构：
来源：
PROCEEDINGS OF THE 2007 INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES: IWPSD-2007 | 2007年
关键词：
random access memory; non-volatile memory; amorphous semiconductors; CMOS memory integrated circuits;
D O I：
10.1109/IWPSD.2007.4472460
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper reviews the current development status of Phase Change Memory (PCM) and discusses an advanced scaling demonstration of this technology. A prospective view of possible applications for PCM is also presented.
引用
收藏
页码：92 / 95
页数：4
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