Measuring the thermal resistance of LED packages in practical circumstances

被引：19

作者：

Lin, Yue ^{[1
]}

Lu, Yijun ^{[1
]}

Gao, Yulin ^{[1
]}

Chen, Yingliang ^{[1
]}

Chen, Zhong ^{[1
]}

机构：

[1] Xiamen Univ, Dept Elect Sci, Fujian Engn Res Ctr Solid State Lighting, Xiamen 361005, Fujian, Peoples R China

来源：

THERMOCHIMICA ACTA | 2011年 / 520卷 / 1-2期

关键词：

Junction temperature; Thermal resistance; Light emitting diode (LED); Solid-state lighting; LIGHT-EMITTING-DIODES; JUNCTION TEMPERATURE; DEVICES; MODELS; POWER;

D O I：

10.1016/j.tca.2011.03.026

中图分类号：

O414.1 [热力学];

学科分类号：

摘要：

In this paper, a new evaluation method for thermal resistance of LED packages is proposed. The method is based on the electrical test method and the time constant theory. The temperature difference of junction-to-case is obtained by the appropriate inflection point on thermal transient response, which is calculated by the minimum point of the 1st derivative curve. Since the method only requires a natural convection heat sink, the thermal resistance of LED packages can be measured quickly and conveniently. The theoretical and experimental results show that it is an effective approach to the measurement of thermal resistance of LED packages in practical situations. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：105 / 109

页数：5

共 13 条

[1] Thermal resistance analysis by induced transient (TRAIT) method for power electronic devices thermal characterization - Part I: Fundamentals and theory [J].

Bagnoli, PE ;

Casarosa, C ;

Ciampi, M ;

Dallago, E .

IEEE TRANSACTIONS ON POWER ELECTRONICS, 1998, 13 (06) :1208-1219

[2] The performance of compact thermal models for LED package [J].

Chen, Huanting ;

Lu, Yijun ;

Gao, Yulin ;

Zhang, Haibing ;

Chen, Zhong .

THERMOCHIMICA ACTA, 2009, 488 (1-2) :33-38

[3] Thermal analysis and characterization of the effect of substrate thinning on the peformances of GaN-based light emitting diodes [J].

Lee, H. K. ;

Yu, J. S. ;

Lee, Y. T. .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2010, 207 (06) :1497-1504

[4] Characteristics of an AlGaInP-Based Light Emitting Diode With an Indium-Tin-Oxide (ITO) Direct Ohmic Contact Structure [J].

Liu, Yi-Jung ;

Yen, Chih-Hung ;

Yu, Kuo-Hui ;

Lin, Pei-Ling ;

Chen, Li-Yang ;

Tsai, Tsung-Han ;

Tsai, Tsung-Yuan ;

Liu, Wen-Chau .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 2010, 46 (02) :246-252

[5] Thermal analysis of loop heat pipe used for high-power LED [J].

Lu, Xiang-you ;

Hua, Tse-Chao ;

Liu, Mei-jing ;

Cheng, Yuan-xia .

THERMOCHIMICA ACTA, 2009, 493 (1-2) :25-29

[6] Measurement of junction temperature in GaN-based laser diodes using voltage-temperature characteristics [J].

Ryu, HY ;

Ha, KH ;

Chae, JH ;

Nam, OH ;

Park, YJ .

APPLIED PHYSICS LETTERS, 2005, 87 (09)

[7] Comparison of transient and static test methods for chip-to-sink thermal interface characterization [J].

Smith, B. ;

Brunschwiler, T. ;

Michel, B. .

MICROELECTRONICS JOURNAL, 2009, 40 (09) :1379-1386

[8] ANALYSIS OF THERMAL TRANSIENT DATA WITH SYNTHESIZED DYNAMIC-MODELS FOR SEMICONDUCTOR-DEVICES [J].

SOFIA, JW .

IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY PART A, 1995, 18 (01) :39-47

[9] Evaluation of short pulse and short time thermal transient measurements [J].

Szekely, V. .

MICROELECTRONICS JOURNAL, 2010, 41 (09) :560-565

[10] A new evaluation method of thermal transient measurement results [J].

Szekely, V .

MICROELECTRONICS JOURNAL, 1997, 28 (03) :277-292

← 1 2 →