Enhanced field-free current-induced magnetization switching by interlayer exchange coupling with insulating spacer layer

被引：13

作者：

Bekele, Zelalem Abebe ^{[1
]}

Lan, Xiukai ^{[1
,2
]}

Meng, Kangkang ^{[3
]}

Liu, Xionghua ^{[1
,2
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China

[2] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China

[3] Univ Sci & Technol Beijing, Sch Mat Sci & Engn, Beijing 100083, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2020年 / 127卷 / 11期

基金：

国家重点研发计划; 北京市自然科学基金; 美国国家科学基金会;

关键词：

SPIN-ORBIT TORQUE; PERPENDICULAR MAGNETIZATION; FERROMAGNETIC LAYER; DENSITY;

D O I：

10.1063/1.5135626

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated field-free current-induced perpendicular magnetization switching in Pt/Co/AlOx/Co/Ta structures by varying the thickness of an insulating spacer layer. A field-free spin-orbit torque switching is realized through the antiferromagnetic interlayer exchange coupling (IEC) between the bottom and top Co layers or by premagnetizing the top Co layer. Significant variations in magnetic and electrical properties are ascribed to thickness dependent IEC by changing the insulating spacer layer from 1.0 to 1.9 nm. When the thickness of the spacer layer is 1.6 nm, we found the strongest IEC field of about 300Oe and optimal field-free current-induced magnetization switching. Micromagnetic simulation validates the existence of the Dzyaloshinskii-Moriya interaction (DMI) effect and the chirality of the domain wall configuration in the stack structures, and the field-free deterministic magnetization switching is mainly induced from DMI and IEC fields. Published under license by AIP Publishing.

引用

页数：7

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