SiGe Esaki tunnel diodes fabricated by UHV-CVD growth and proximity rapid thermal diffusion

被引：6
|
作者：
Wernersson, LE [1 ]
Kabeer, S
Zela, V
Lind, E
Zhang, J
Seifert, W
Kosel, T
Seabaugh, A
机构：
[1] Univ Notre Dame, Dept Elect Engn, Notre Dame, IN 46656 USA
[2] Lund Univ, S-22100 Lund, Sweden
来源：
ELECTRONICS LETTERS | 2004年 / 40卷 / 01期
关键词：
D O I：
10.1049/el:20040048
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A process for realisation of SiGe Esaki diodes in layers grown by ultra-high vacuum chemical vapour deposition has been developed and the first Esaki diodes are reported for this growth method. Intrinsic SiGe-layers are grown on highly boron-doped p(+)-Si layers, while post-growth proximity rapid thermal diffusion of phosphorous into the SiGe is employed to form an n(+)-layer. Tunnel diodes with a depletion layer width of about 6 nm have been realised in Si0.74Ge0.26, showing a peak current density of 0.18 kA/cm(2) and a current peak-to-valley ratio of 2.6 at room temperature.
引用
收藏
页码：83 / 85
页数：3
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