Preparation and characterization of cross-linked poly (vinylalcohol)-graphene oxide nanocomposites as an interlayer forSchotty barrier diodes

被引:14
作者
Badrinezhad, Lida [1 ]
Bilkan, Cigdem [2 ]
Azizian-Kalandaragh, Yashar [1 ,3 ]
Nematollahzadeh, Ali [4 ]
Orak, Ikram [5 ]
Altindal, Semsettin [6 ]
机构
[1] Univ Mohaghegh Ardabili, Fac Sci, Dept Phys, POB 179, Ardebil, Iran
[2] Karatekin Univ, Fac Sci, Dept Phys, Cankiri, Turkey
[3] SUAT, Dept Engn Sci, Namin, Iran
[4] Univ Mohaghegh Ardabili, Dept Chem Engn, Ardebil, Iran
[5] Bingol Univ, Fac Sci & Arts, Dept Phys, Bingol, Turkey
[6] Gazi Univ, Fac Sci, Dept Phys, Ankara, Turkey
来源
INTERNATIONAL JOURNAL OF MODERN PHYSICS B | 2018年 / 32卷 / 01期
关键词
Graphene oxide; nanocomposites; poly(vinyl alcohol); cross-link; Schottky barrier diodes (SBDs); CAPACITANCE-VOLTAGE; GRAPHENE;
D O I
10.1142/S0217979217502769
中图分类号
O59 [应用物理学];
学科分类号
摘要
Cross-linked polyvinyl alcohol (PVA) graphene oxide (GO) nanocomposites were prepared by simple solution-mixing route and characterized by Raman, UV visible and fourier transform infrared (FT-IR) spectroscopy analysis, X-ray diffraction (XRD) and scanning electron microscopy (SEM) techniques. The XRD pattern and SEM analysis showed significant changes in the nanocomposite structures, and the FT-IR spectroscopy results confirmed the chemical interaction between the GO filler and the PVA matrix. After these morphological characterizations, PVA-GO-based diodes were fabricated and their electrical properties were characterized using current voltage (I-V) and impedance-voltage-frequency (Z-V-f) measurements at room temperature. Semilogarithmic I-V characteristics of diode showed a good rectifier behavior. The values of C and G/w increased with decreasing frequency due to the surface/interface states (N-ss) which depend on the relaxation time and the frequency of the signal. The voltage, dependent profiles of N-ss and series resistance (Re) were obtained from the methods of high-low frequency capacitance and Nicollian and Brews, respectively. The obtained values of N-ss and R-s were attributed to the use of cross-linked PVA-GO interlayer at the Au/n-Si interface.
引用
收藏
页数:19
相关论文
共 42 条
[1]   Green Synthesis of Reduced Graphene Oxide/Polyaniline Composite and Its Application for Salt Rejection by Polysulfone-Based Composite Membranes [J].
Akin, Ilker ;
Zor, Erhan ;
Bingol, Haluk ;
Ersoz, Mustafa .
JOURNAL OF PHYSICAL CHEMISTRY B, 2014, 118 (21) :5707-5716
[2]   Density of interface states, excess capacitance and series resistance in the metal-insulator-semiconductor (MIS) solar cells [J].
Altindal, S ;
Tataroglu, A ;
Dökme, I .
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2005, 85 (03) :345-358
[3]  
Bao C., 2011, J MATER CHEM, V21, P36
[4]   A compare of electrical characteristics in Al/p-Si (MS) and Al/C20H12/p-Si (MPS) type diodes using current-voltage (I-V) and capacitance-voltage (C-V) measurements [J].
Bilkan, C. ;
Zeyrek, S. ;
San, S. E. ;
Altindal, S. .
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2015, 32 :137-144
[5]   The source of negative capacitance and anomalous peak in the forward bias capacitance-voltage in Cr/p-si Schottky barrier diodes (SBDs) [J].
Bilkan, Cigdem ;
Gumus, Ahmet ;
Altmdal, Semsettin .
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2015, 39 :484-491
[6]  
Birck C., 2014, POLYM LETT, V8, P12
[7]  
Card H., 1971, J PHYS D, V4, P10
[8]  
Cetinkaya H., 2017, J MATER SCI-MATER EL, V28, P11
[9]  
Compton O. C., 2012, ACS NANO, V6, P3
[10]   Graphene-Based Polymer Composites and Their Applications [J].
Das, Tapan K. ;
Prusty, Smita .
POLYMER-PLASTICS TECHNOLOGY AND ENGINEERING, 2013, 52 (04) :319-331