The CDF Run IIb silicon detector

被引：4

作者：

Aoki, M

Bacchetta, N

Behari, S

Benjamin, D

Bisello, D

Bolla, G

Bortoletto, D

Burghard, A

Busetto, G

Cabrera, S

Canepa, A

Castro, G

Cardoso, G

Chertok, M

Ciobanu, C

Derylo, G

Fang, I

Flaugher, B

Freeman, J

Galtieri, L

Galyardt, J

Garcia-Sciveres, M

Giurgiu, G

Gorelov, I

Haber, C

Hara, K

Hoeferkamp, M

Holbrook, B

Hrycyk, M

Junk, T

Kim, S

Kobayashi, K

Krieger, B

Kruse, M

Lander, R

Lu, RS

Lukens, P

Malferrari, L

Manea, C

Margotti, A

Maksimovic, P

Merkel, P

Moccia, S

Nakano, I

Naoumov, D

Novak, J

Okusawa, T

Orlov, Y

Pancaldi, G

Pantano, D

机构：

[1] Fermilab Natl Accelerator Lab, Batavia, IL 60510 USA

[2] Univ Tsukuba, Tsukuba, Ibaraki 3058571, Japan

[3] Univ Padua, Padua, Italy

[4] Ist Nazl Fis Nucl, Padua, Italy

[5] Johns Hopkins Univ, Baltimore, MD 21218 USA

[6] Duke Univ, Durham, NC 27708 USA

[7] Purdue Univ, Dept Phys, W Lafayette, IN 47907 USA

[8] Univ New Mexico, Albuquerque, NM 87131 USA

[9] Univ Bologna, Bologna, Italy

[10] Ist Nazl Fis Nucl, I-40126 Bologna, Italy

[11] Univ Calif Davis, Davis, CA 95616 USA

[12] Univ Illinois, Urbana, IL 61801 USA

[13] Lawrence Berkeley Lab, Berkeley, CA 94720 USA

[14] Carnegie Mellon Univ, Pittsburgh, PA 15213 USA

[15] Okayama Univ, Okayama 7008530, Japan

[16] Acad Sinica, Taipei 11529, Taiwan

[17] Osaka City Univ, Osaka 5588585, Japan

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2004年 / 518卷 / 1-2期

关键词：

CDF; Run IIb; silicon vertex detector; SVX4; silicon sensors; Fermilab; Tevatron;

D O I：

10.1016/j.nima.2003.10.080

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Fermilab plans to deliver 5-15 fb(-1) of integrated luminosity to the CDF and D0 experiments. The current inner silicon detectors at CDF (SVXIIa and L00) will not tolerate the radiation dose associated with high-luminosity running and will need to be replaced. A new readout chip (SVX4) has been designed in radiation-hard 0.25 mum, CMOS technology. Single-sided sensors are arranged in a compact structure, called a stave, with integrated readout and cooling svstems. This paper describes the general design of the Run IIb system, testing results of prototype electrical components (staves), and prototype silicon sensor performance before and after irradiation. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：270 / 276

页数：7

共 2 条

[1]

*CDF COLL, 2003, 6261 CDFNOTE

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NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2001, 466 (02) :308-326

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