High responsivity GaNAsSb p-i-n photodetectors at 1.3μm grown by radio-frequency nitrogen plasma-assisted molecular beam epitaxy

被引：12

作者：

Tan, K. H. ^{[1
]}

Yoon, S. F. ^{[1
]}

Loke, W. K. ^{[1
]}

Wicaksono, S. ^{[1
]}

Ng, T. K. ^{[1
]}

Lew, K. L. ^{[1
]}

Stoehr, A. ^{[2
]}

Fedderwitz, S. ^{[2
]}

Weiss, M. ^{[2
]}

Jaeger, D. ^{[2
]}

Saadsaoud, N. ^{[3
]}

Dogheche, E. ^{[3
]}

Decoster, D. ^{[3
]}

Chazelas, J. ^{[4
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

[2] Univ Duisburg Essen, ZHO Optoelect, D-47048 Duisburg, Germany

[3] Univ Sci & Tech Lille Flandres Artois, IEMN, CNRS, UMR 8520, F-59652 Villeneuve Dascq, France

[4] Thales Airborne Syst, F-78852 Elancourt, France

来源：

OPTICS EXPRESS | 2008年 / 16卷 / 11期

关键词：

D O I：

10.1364/OE.16.007720

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

GaNAsSb/GaAs p-i-n photodetectors with an intrinsic GaNAsSb photoabsorption layer grown at 350 degrees C, 400 degrees C, 440 degrees C and 480 degrees C, have been prepared using radio-frequency nitrogen plasma-assisted molecular beam epitaxy in conjunction with a valved antimony cracker source. The i-GaNAsSb photoabsorption layer contains 3.3% of nitrogen and 8% of antimony, resulting in DC photo-response up to wavelengths of 1350nm. The device with i-GaNAsSb layer grown at 350 degrees C exhibits extremely high photoresponsivity of 12A/W at 1.3 mu m. These photodetectors show characteristics which strongly suggest the presence of carrier avalanche process at reverse bias less than 5V. (C) 2008 Optical Society of America.

引用

页码：7720 / 7725

页数：6

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