Channeling-like effects due to the macroscopic structure of porous silicon

When performing Rutherford Backscattering Spectrometry (RBS) measurements combined with channeling on ''columnar'' porous Si samples with the beam aligned to the direction of the pores, an additional yield decrease appears due to the macroscopic structure. Changes in the stopping power as the ions cross holes and material walls will also result in an additional spread in the ion energy. This work presents both experimental results and Monte Carlo type simulations showing the above structural effects. The simulations were done by a currently developed code, RBS-MAST, which is able to treat arbitrary structures on a nm-mu m scale.