Determination of doping type by calibrated capacitance scanning microwave microscopy

被引：10

作者：

Hommel, S. ^{[1
]}

Killat, N. ^{[1
]}

Altes, A. ^{[1
]}

Schweinboeck, T. ^{[1
]}

Kreupl, F. ^{[2
]}

机构：

[1] Infineon Technol AG, Campeon 1-12, D-85579 Neubiberg, Germany

[2] Tech Univ Munich, Dept Hybrid Elect Syst, Arcisstr 21, D-80333 Munich, Germany

来源：

MICROELECTRONICS RELIABILITY | 2017年 / 76卷

关键词：

SMM; Dopant profile; Dopant density; Scanning microwave microscopy; Atomic force microscopy; AFM; Dopant type;

D O I：

10.1016/j.microrel.2017.06.050

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The investigation of dopant distribution in discrete and highly integrated electronic devices is the main application of Scanning Microwave Microscopy in the semiconductor industry. To reliably determine the dopant type and the relation between differently doped areas within an electronic device, a calibration method based on the estimated complex impedance is introduced. The validation on differently doped silicon demonstrates that the method is able to simultaneously acquire accumulation and depletion capacitances. This enables the calculation of a 2D dopant type profile and furthermore provides a monotonic dependence of the measured capacitance on dopant density. (C) 2017 Elsevier Ltd. All rights reserved.

引用

页码：218 / 221

页数：4

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