Simulation of Landau quantization effects due to strong magnetic fields in (110) Si hole inversion layers

被引：0

作者：

Pham, A. T. ^{[1
]}

Jungemann, C. ^{[2
]}

Meinerzhagen, B. ^{[1
]}

机构：

[1] TU Braunschweig, BST, D-38023 Braunschweig, Germany

[2] Univ Bundeswehr Munchen, EIT4, D-85577 Neubiberg, Germany

来源：

2010 14TH INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE 2010) | 2010年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Landau quantization due to strong magnetic fields is simulated for (110) Si hole inversion layers. The simulations are based on the self-consistent solution of the 6 x 6 (k) over right arrow. (p) over right arrow Schrodinger equation (SE) and Poisson equation (PE). A new method to solve the 2D (k) over right arrow . (p) over right arrow SE is presented. The new simulations take into account Landau quantization, Zeeman spin splitting and size quantization at the same time. Oscillations of the density of states at the Fermi level (D-F (B) or D-F (V-G)) are demonstrated. The oscillations of the simulated D-F (V-G) characteristics are similar to the oscillations that measured transconductance versus gate voltage (g(m) (V-G)) characteristics show for the same samples and identical conditions.

引用

页码：335 / 338

页数：4

共 8 条

[1] THEORY OF QUANTUM TRANSPORT IN A 2-DIMENSIONAL ELECTRON-SYSTEM UNDER MAGNETIC-FIELDS .1. CHARACTERISTICS OF LEVEL BROADENING AND TRANSPORT UNDER STRONG FIELDS [J].