An Embedded Half-Bridge Γ-Z-Source Inverter with Reduced Voltage Stress on Capacitors

In this paper, an embedded half-bridge Z-source inverter based on gamma structure is proposed. In contrast with the classical half-bridge inverter, the proposed inverter can generate zero voltage levels in output. High voltage gain and low voltage stress on capacitors are the main advantages of the proposed converter. The value of the boost factor in the proposed structure is increased by changing both the shoot-through (ST) duty cycle and turns ratio of the transformer. The operating principle of the proposed converter in four operating modes is presented. We also calculate the critical inductance and compare the proposed converter with conventional topologies. In addition, power loss and THD analysis are presented. Finally, PSCAD/EMTDC software is used to verify the correct operation of the proposed inverter and the experimental results.</p>